High quality m-plane GaN grown under nitrogen-rich conditions by plasma assisted molecular beam epitaxy^a) Available to Purchase

Homoepitaxial growth of $m$-plane GaN $(11¯00)$ as a function of substrate miscut and temperature was studied by plasma assisted molecular beam epitaxy (PAMBE). The authors demonstrate that it is possible to obtain high-quality GaN on the $m$-plane under nitrogen-rich conditions at $730°C$⁠. This is in contrast to the $c$-plane where three-dimensional growth mode is observed under the same conditions. They find a strong growth anisotropy and describe GaN $(11¯00)$ surface morphology dependence on the sample miscut direction. The results indicate that by introducing a sample miscut toward $⟨112¯6¯⟩$ one may expect parallel atomic steps when growing under nitrogen-rich conditions at $730°C$ by PAMBE.