In the view of improving standard TANOS stacks, a possible route is the replacement of blocking oxide with materials with higher dielectric constant , as this would increase the electric field across the tunnel oxide. A possible solution is to integrate rare earth scandates. Among the scandates, appears as an attractive material due to the reported high- value. Films with 10–30 nm nominal thickness were grown by atomic layer deposition (ALD) on Si substrates for process optimization and structural characterization. and were used as Sc and Dy precursors and as oxidizing agent. First, and growth process was optimized by changing growth temperature and ALD cycle. The best conditions for the deposition of the ternary DyScO films were found to be and pulsing ratio. Optimized films were also grown on Si-rich SiN for integration as blocking oxide. After deposition, films were subjected to rapid thermal annealing up to to check their thermal stability. Film thickness was checked by x-ray reflectivity, together with roughness and electron density. Film crystallinity was investigated by grazing incidence x-ray diffraction. Film uniformity and thermal stability were explored by time-of-flight secondary ion mass spectrometry (ToF-SIMS) depth profiles. Dielectric constant was extracted from capacitance-voltage (C-V) electrical measurements. As deposited amorphous DyScO films on silicon remain amorphous after annealing up to . Film electron density reduces while thickness increases with annealing, surface roughness remaining at . The measured Sc:Dy atomic ratio by total x-ray fluorescence analyses is 1.33 in the as deposited film. ToF-SIMS depth profiles showed that film uniformity and composition is not preserved at , in films deposited on Si, as major Si diffusion affects the ternary oxide. Only at the diffusion phenomena and film composition are preserved. The extracted DyScO dielectric constant is in films annealed at on Si. When deposited on Si-rich SiN, DyScO uniformity remains well preserved up to , with an improvement of the thermal stability with respect to deposition on Si. Si diffusion is evident at only. The -value extracted from C-V resulted to be .
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January 2011
Research Article|
January 26 2011
Synthesis and characterization of DyScO films deposited on Si and Si-rich SiN by atomic layer deposition for blocking layer replacement in TANOS stack
A. Lamperti;
A. Lamperti
a)
Laboratorio MDM,
IMM-CNR
, via C. Olivetti 2, 20864 Agrate Brianza (MB), Italy
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E. Cianci;
E. Cianci
Laboratorio MDM,
IMM-CNR
, via C. Olivetti 2, 20864 Agrate Brianza (MB), Italy
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U. Russo;
U. Russo
Laboratorio MDM,
IMM-CNR
, via C. Olivetti 2, 20864 Agrate Brianza (MB), Italy
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S. Spiga;
S. Spiga
a)
Laboratorio MDM,
IMM-CNR
, via C. Olivetti 2, 20864 Agrate Brianza (MB), Italy
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O. Salicio;
O. Salicio
Laboratorio MDM,
IMM-CNR
, via C. Olivetti 2, 20864 Agrate Brianza (MB), Italy
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G. Congedo;
G. Congedo
Laboratorio MDM,
IMM-CNR
, via C. Olivetti 2, 20864 Agrate Brianza (MB), Italy
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M. Fanciulli
M. Fanciulli
Laboratorio MDM,
IMM-CNR
, via C. Olivetti 2, 20864 Agrate Brianza (MB), Italy and Dipartimento di Scienza dei Materiali, Università degli Studi di Milano Bicocca
, Milano, Italy
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a)
Authors to whom correspondence should be addressed; electronic addresses: alessio.lamperti@mdm.imm.cnr.it and sabina.spiga@mdm.imm.cnr.it
J. Vac. Sci. Technol. B 29, 01AE03 (2011)
Article history
Received:
August 11 2010
Accepted:
December 13 2010
Citation
A. Lamperti, E. Cianci, U. Russo, S. Spiga, O. Salicio, G. Congedo, M. Fanciulli; Synthesis and characterization of DyScO films deposited on Si and Si-rich SiN by atomic layer deposition for blocking layer replacement in TANOS stack. J. Vac. Sci. Technol. B 1 January 2011; 29 (1): 01AE03. https://doi.org/10.1116/1.3534024
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