An integration scheme of block copolymer directed assembly with 193 nm immersion lithography is presented. It is experimentally shown that a thin silicon nitride film can be used as an antireflective coating (ARC). With such an ARC, directed assembly of a block copolymer (BCP) to triple the feature density of a chemical pattern was demonstrated. A high quality of assembly was obtained over a large area, and pattern transfer feasibility was illustrated. The integration of feature density multiplication via directed assembly of a BCP with 193 nm immersion lithography provided a pattern quality that was comparable with existing double patterning techniques, suggesting that the process could be a promising candidate for extending the use of current 193 immersion lithography tools to higher pattern densities.
Skip Nav Destination
,
,
,
,
,
,
Article navigation
November 2010
Research Article|
November 30 2010
Integration of block copolymer directed assembly with 193 immersion lithography Available to Purchase
Chi-Chun Liu;
Chi-Chun Liu
Department of Chemical and Biological Engineering,
University of Wisconsin–Madison
, Madison, Wisconsin 53706
Search for other works by this author on:
Paul F. Nealey;
Paul F. Nealey
a)
Department of Chemical and Biological Engineering,
University of Wisconsin–Madison
, Madison, Wisconsin 53706
Search for other works by this author on:
Alex K. Raub;
Alex K. Raub
Center for High Technology Materials,
University of New Mexico
, Albuquerque, New Mexico 87106
Search for other works by this author on:
Philip J. Hakeem;
Philip J. Hakeem
Center for High Technology Materials,
University of New Mexico
, Albuquerque, New Mexico 87106
Search for other works by this author on:
Steve R. J. Brueck;
Steve R. J. Brueck
Center for High Technology Materials,
University of New Mexico
, Albuquerque, New Mexico 87106
Search for other works by this author on:
Eungnak Han;
Eungnak Han
Department of Material Science and Engineering,
University of Wisconsin–Madison
, Madison, Wisconsin 53706
Search for other works by this author on:
Padma Gopalan
Padma Gopalan
Department of Material Science and Engineering,
University of Wisconsin–Madison
, Madison, Wisconsin 53706
Search for other works by this author on:
Chi-Chun Liu
Paul F. Nealey
a)
Alex K. Raub
Philip J. Hakeem
Steve R. J. Brueck
Eungnak Han
Padma Gopalan
Department of Chemical and Biological Engineering,
University of Wisconsin–Madison
, Madison, Wisconsin 53706a)
Author to whom correspondence should be addressed; electronic mail: [email protected]
J. Vac. Sci. Technol. B 28, C6B30–C6B34 (2010)
Article history
Received:
July 13 2010
Accepted:
September 07 2010
Citation
Chi-Chun Liu, Paul F. Nealey, Alex K. Raub, Philip J. Hakeem, Steve R. J. Brueck, Eungnak Han, Padma Gopalan; Integration of block copolymer directed assembly with 193 immersion lithography. J. Vac. Sci. Technol. B 1 November 2010; 28 (6): C6B30–C6B34. https://doi.org/10.1116/1.3501348
Download citation file:
Pay-Per-View Access
$40.00
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Citing articles via
Future of plasma etching for microelectronics: Challenges and opportunities
Gottlieb S. Oehrlein, Stephan M. Brandstadter, et al.
Science challenges and research opportunities for plasma applications in microelectronics
David B. Graves, Catherine B. Labelle, et al.
Novel low-temperature and high-flux hydrogen plasma source for extreme-ultraviolet lithography applications
A. S. Stodolna, T. W. Mechielsen, et al.
Related Content
Towards an all-track 300 mm process for directed self-assembly
J. Vac. Sci. Technol. B (October 2011)
Fabrication of chevron patterns for patterned media with block copolymer directed assembly
J. Vac. Sci. Technol. B (October 2011)
Mechanism and dynamics of block copolymer directed assembly with density multiplication on chemically patterned surfaces
J. Vac. Sci. Technol. B (November 2010)
Sub-30 nm pitch line-space patterning of semiconductor and dielectric materials using directed self-assembly
J. Vac. Sci. Technol. B (November 2012)
PMMA removal selectivity to polystyrene using dry etch approach
J. Vac. Sci. Technol. B (October 2016)