The influence of moisture on Cu line electromigration (EM) behavior of dual damascene interconnection is reported. The authors have found that moisture has a negative influence on EM behavior, but it depends on the seal-ring structure located along the peripheral of the test pattern. The reduced Cu lifetime, observed for tested samples without seal-ring structure, was due to lateral moisture penetration. Lateral moisture diffusion was considered an effective mechanism for deteriorating the Cu interface during the die-sawing processing for structures without seal-ring layout. As a result, the seal-ring layout is effective and essential in Cu/low-dielectric (low-) material integrity to prevent moisture penetration during the package procedures.
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November 2010
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December 01 2010
Moisture effect on electromigration characteristics for copper dual damascene interconnection Available to Purchase
Yi-Lung Cheng;
Yi-Lung Cheng
a)
Department of Electrical Engineering,
National Chi-Nan University
, Nan-Tou, Taiwan 54561, Republic of China
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Wei-Yuan Chang;
Wei-Yuan Chang
Department of Electrical Engineering,
National Chi-Nan University
, Nan-Tou, Taiwan 54561, Republic of China
Search for other works by this author on:
Ying-Lang Wang
Ying-Lang Wang
Department of Electrical Engineering,
National Chi-Nan University
, Nan-Tou, Taiwan 54561, Republic of China
Search for other works by this author on:
Yi-Lung Cheng
a)
Department of Electrical Engineering,
National Chi-Nan University
, Nan-Tou, Taiwan 54561, Republic of China
Wei-Yuan Chang
Department of Electrical Engineering,
National Chi-Nan University
, Nan-Tou, Taiwan 54561, Republic of China
Ying-Lang Wang
Department of Electrical Engineering,
National Chi-Nan University
, Nan-Tou, Taiwan 54561, Republic of Chinaa)
Electronic mail: [email protected]
J. Vac. Sci. Technol. B 28, 1322–1325 (2010)
Article history
Received:
June 08 2009
Accepted:
September 20 2010
Citation
Yi-Lung Cheng, Wei-Yuan Chang, Ying-Lang Wang; Moisture effect on electromigration characteristics for copper dual damascene interconnection. J. Vac. Sci. Technol. B 1 November 2010; 28 (6): 1322–1325. https://doi.org/10.1116/1.3501127
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