The authors studied the device characteristics of thin HfON charge-trap layer nonvolatile memory in a structure. A large memory window and fast erase speed, as well as good retention time, were achieved by using the nitridation technique to incorporate nitrogen into the thin layer, which causes a high electron-trap density in the HfON layer. The higher dielectric constant of the HfON charge-trap layer induces a higher electric field in the tunneling oxide at the same voltage compared to non-nitrided films and, thus, creates a high Fowler–Nordheim tunneling current to increase the erase and programming speed. The trap level energy in the HfON layer was calculated by using an amphoteric model.
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Research Article| September 08 2010
Device characteristics of HfON charge-trap layer nonvolatile memory
Tackhwi Lee, Sanjay K. Banerjee; Device characteristics of HfON charge-trap layer nonvolatile memory. J. Vac. Sci. Technol. B 1 September 2010; 28 (5): 1005–1010. https://doi.org/10.1116/1.3481140
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