Copper phthalocyanine (CuPc) thin film transistors were fabricated using a tapered edge bottom contact device geometry, and mobility saturation was observed for devices with CuPc thicknesses of 12 monolayers (MLs) and greater. The mobility saturation is attributed to a significantly decreased contact resistance resulting from a bilayer resist lift-off method, as compared with a single layer resist lift-off method. Threshold voltages are also found to saturate above 12 ML CuPc thicknesses.
Mobility saturation in tapered edge bottom contact copper phthalocyanine thin film transistors
James E. Royer, Jeongwon Park, Corneliu Colesniuc, Joon Sung Lee, Thomas Gredig, Sangyeob Lee, Sungho Jin, Ivan K. Schuller, William C. Trogler, Andrew C. Kummel; Mobility saturation in tapered edge bottom contact copper phthalocyanine thin film transistors. J. Vac. Sci. Technol. B 1 July 2010; 28 (4): C5F22–C5F27. https://doi.org/10.1116/1.3464771
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