The authors report the photoluminescence and photoreflectance characteristics of molecular beam epitaxy grown InAs nanostructures on GaAs (631)-oriented substrates. Prior to the InAs growth, self-assembled nanochannels on the GaAs buffer layer were formed, which later were used as templates for nanostructures formation. Different samples were prepared by varying the amount of InAs from 0.75 to 2 ML (monolayer), 50 nm of GaAs was grown on top as a capping layer. Low temperature photoluminescence spectroscopy showed intense optical transitions in the spectra, their energy position directly depends on the quantity of InAs deposited. The self-assembling of InAs quantum wires (QWRs) at the early stages of growth is suggested. Anisotropy effects in the InAs nanostructures were corroborated by polarized photoluminescence supporting the proposal of formation of QWRs. Photoreflectance spectroscopy at room temperature was also employed to characterize the samples. It is found that in addition to the band-gap energy transition, features associated with quantum confinement in the wetting layer were observed even for very low quantities of InAs deposited.

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