Point-defect-mediated diffusion processes are investigated in strained SiGe alloys using kinetic lattice Monte Carlo (KLMC) simulation technique. The KLMC simulator incorporates an augmented lattice domain and includes defect structures, atomistic hopping mechanisms, and the stress dependence of transition rates obtained from density functional theory calculation results. Vacancy-mediated interdiffusion in strained SiGe alloys is analyzed, and the stress effect caused by the induced strain of germanium is quantified separately from that due to germanium-vacancy binding. The results indicate that both effects have substantial impact on interdiffusion.
REFERENCES
1.
G.
Henkelman
and H.
Jonsson
, J. Chem. Phys.
113
, 9978
(2000
).2.
G.
Xia
, J. L.
Hoyt
, and M.
Canonico
, J. Appl. Phys.
101
, 044901
(2007
).3.
P.
Ranade
, H.
Takeuchi
, W. C.
Lee
, V.
Subramanian
, and T. J.
King
, IEEE Trans. Electron Devices
49
, 1436
(2002
).4.
B. P.
Uberuaga
, Ph.D. thesis, University of Washington
, 2000
.5.
M.
Diebel
, Ph.D. thesis, University of Washington
, 2004
.6.
C.
Ahn
, Ph.D. thesis, University of Washington
, 2007
.7.
8.
A.
Horsfield
, S. T.
Dunham
, and H.
Fujitani
, Multiscale Modeling of Materials Symposium
, 1999
(unpublished), p. 285
.9.
M.
Gavelle
et al., J. Appl. Phys.
104
, 113524
(2008
).10.
C.
Ahn
, J.
Song
, and S. T.
Dunham
, “Transistor Scaling-Methods, Materials and Modeling
,” in Material Research Society Symposium Proceedings
, 913, 2006
, p. 179
.11.
I.
Aberg
, C.
Ni Chleirigh
, and J. L.
Hoyt
, ECS Proceedings: Advanced Gate Stack, Source/Drain and Channel Engineering for Si-Based CMOS: New Materials, Processes and Equipment
, 2005
(unpublished), Paper No. PV2005–05, p. 505
.12.
L.
Boltzmann
, Ann. Phys.
289
, 959
(1894
).13.
14.
P.
Dierckx
, Computing
24
, 349
(1980
).© 2010 American Vacuum Society.
2010
American Vacuum Society
You do not currently have access to this content.
