Detailed simulation study of embedded SiGe and Si:C source/drain stressors in nanoscaled silicon on insulator metal oxide semiconductor field effect transistors

Strained silicon techniques have become an indispensable technology feature, enabling the momentum of semiconductor scaling. Embedded silicon-germanium (eSiGe) is already widely adopted in the industry and delivers outstanding $p$-metal oxide semiconductor field effect transistor (MOSFET) performance improvements. The counterpart for $n$-MOSFET is embedded silicon-carbon (eSi:C). However, $n$-MOSFET performance improvement is much more difficult to achieve with eSi:C due to the challenging process integration. In this study, detailed TCAD simulations are employed to compare the efficiency of eSiGe and eSi:C stressors and to estimate their potential for performance enhancements in future nanoscaled devices with gate lengths down to $20nm$⁠. It is found that eSiGe as a stressor is superior to eSi:C in deeply scaled and highly strained devices due to its easier process integration, reduced parasitic resistance, and nonlinear effects in the silicon band structure, favoring hole mobility enhancement at high strain levels.