The authors report on InOx transparent thin-film transistor (TTFT) fabricated by low-energetic ion bombardment technique at room temperature. The InOx TTFTs were prepared using a coplanar bottom gate configuration with indium tin oxide (ITO), SiNx, and InOx thin films as the electrode, gate dielectric, and channel, respectively. The quality of the films could be significantly improved by eliminating bombardment of energetic particles created in the discharge processes using a prolonged target-to-substrate distance. The target-to-substrate distance for depositing SiNx was 15cm, and 18cm for depositing ITO and InOx. The leakage current density of the 180nm thick SiNx films under 1.0MVcm field strength was less than 1nAcm2. The C-V measurement of the AlInOxp-SiAl capacitor structure showed that no hysteresis voltage was observed from the high-resistivity InOx films. This indicated that the electrical defects of the 150nm thick InOx channels could be reduced using the long-throw deposition technique. In addition, the InOx TTFTs were engineered to operate in the enhancement mode with improved carrier mobility by adjusting the oxygen partial pressure during growth. The proposed InOx TTFTs with a 20μm channel length presented a saturation mobility of 3.8cm2V1s1, a threshold voltage of 1.7V, an on/off ratio of 2.3×106, and a subthreshold slope of 1.5V/decade.

1.
K.
Nomura
,
H.
Ohta
,
K.
Ueda
,
T.
Kamiya
,
M.
Hirano
, and
H.
Hosono
,
Science
300
,
1269
(
2003
).
2.
P. F.
Carcia
,
R. S.
McLean
, and
M. H.
Reilly
,
Appl. Phys. Lett.
88
,
123509
(
2006
).
3.
W.
Lim
,
S.-H.
Kim
,
Y. L.
Wang
,
J. W.
Lee
,
D. P.
Norton
,
S. J.
Pearton
,
F.
Ren
, and
I. I.
Kravchenko
,
J. Electrochem. Soc.
155
,
383
(
2008
).
4.
M.
Ofuji
 et al.,
IEEE Electron Device Lett.
28
,
273
(
2007
).
5.
M.
Kim
 et al.,
Appl. Phys. Lett.
90
,
212114
(
2007
).
6.
K.
Long
 et al.,
IEEE Trans. Electron Devices
53
,
1789
(
2006
).
7.
Y.
Yamaji
,
M.
Ikeda
,
M.
Akiyama
, and
T.
Endo
,
Jpn. J. Appl. Phys., Part 1
38
,
6202
(
1999
).
8.
Y.
Sun
and
J. A.
Roger
,
Adv. Mater. (Weinheim, Ger.)
19
,
1897
(
2007
).
9.
A. T.
Voutsas
and
M. K.
Hatalis
,
J. Electrochem. Soc.
140
,
871
(
1993
).
10.
R.
Martins
,
P.
Barquinha
,
L.
Pereira
,
I.
Ferreira
, and
E.
Fortunato
,
Appl. Phys. A: Mater. Sci. Process.
89
,
37
(
2007
).
11.
R.
Martins
,
I.
Ferreira
,
G.
Gonçalves
,
P.
Barquinha
,
L.
Pereira
, and
E.
Fortunato
,
J. Appl. Phys.
101
,
044505
(
2007
).
12.
P. F.
Carcia
,
R. S.
McLean
,
M. H.
Reilly
, and
G.
Nunes
, Jr.
,
Appl. Phys. Lett.
82
,
1117
(
2003
).
13.
E. M. C.
Fortunato
,
P. M. C.
Barquinha
,
A. C. M. B. G.
Pimentel
,
A. M. F.
Goncalves
,
A. J. S.
Marques
,
L. M. N.
Pereira
, and
R. F. P.
Martins
,
Adv. Mater. (Weinheim, Ger.)
17
,
590
(
2005
).
14.
W.
Lim
,
S.-H.
Kim
,
Y. L.
Wang
,
J. W.
Lee
,
D. P.
Nprton
,
S. J.
Pearton
,
F.
Ren
, and
I. I.
Kravchenko
,
J. Vac. Sci. Technol. B
26
,
959
(
2008
).
15.
E.
Fortunato
,
P.
Barquinha
,
A.
Pimentel
,
L.
Pereira
,
G.
Gonçalves
, and
R.
Martins
,
Phys. Status Solidi A
1
,
34
(
2007
).
16.
G.
Lavareda
,
C. N.
Carvalho
,
E.
Fortunato
,
A. R.
Ramos
,
E.
Alves
,
O.
Conde
, and
A.
Amaral
,
J. Non-Cryst. Solids
352
,
2311
(
2006
).
17.
H. S.
Kim
,
P. D.
Byrne
,
A.
Facchetti
, and
T. J.
Marks
,
J. Am. Chem. Soc.
130
,
38
(
2008
).
18.
Dhananjay
and
C. W.
Chu
,
Appl. Phys. Lett.
91
,
132111
(
2007
).
19.
K. J.
Saji
,
M. K.
Jayaraj
,
K.
Nomura
,
T.
Kamiya
, and
H.
Hosono
,
J. Electrochem. Soc.
155
,
H390
(
2008
).
20.
A.
Suresh
and
J. F.
Muth
,
Appl. Phys. Lett.
92
,
033502
(
2008
).
21.
D. H.
Levy
,
D.
Freeman
,
S. F.
Nelson
,
P. J.
Cowdery-Corvan
, and
L. M.
Irving
,
Appl. Phys. Lett.
92
,
192101
(
2008
).
22.
C. G.
Choi
,
S. J.
Seo
, and
B. S.
Baz
,
Electrochem. Solid-State Lett.
11
,
H7
(
2008
).
23.
C. H.
Chung
,
Y. W.
Ko
,
Y. H.
Kim
,
C. Y.
Sohn
,
H. Y.
Chu
,
S. H.
Ko Park
, and
J. H.
Lee
,
Thin Solid Films
491
,
294
(
2005
).
24.
R. E.
Somekh
,
J. Vac. Sci. Technol. A
2
,
1285
(
1984
).
25.
Y.
Shigesato
and
D. C.
Paine
,
Thin Solid Films
238
,
44
(
1994
).
26.
L. J.
Meng
and
M. P.
dos Santos
,
Thin Solid Films
289
,
65
(
1996
).
27.
B. D.
Cullity
,
Elements of X-Ray Diffraction
, 2nd ed. (
Addison-Wesley
,
London
,
1978
), p.
101
.
28.
A.
Rolland
,
J.
Richard
,
J. P.
Kleider
, and
D.
Mencaraglia
,
J. Electrochem. Soc.
140
,
3679
(
1993
).
29.
K.
Remashan
,
J. H.
Jang
,
D. K.
Hwang
, and
S. J.
Park
,
Appl. Phys. Lett.
91
,
182101
(
2007
).
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