The authors report on transparent thin-film transistor (TTFT) fabricated by low-energetic ion bombardment technique at room temperature. The TTFTs were prepared using a coplanar bottom gate configuration with indium tin oxide (ITO), , and thin films as the electrode, gate dielectric, and channel, respectively. The quality of the films could be significantly improved by eliminating bombardment of energetic particles created in the discharge processes using a prolonged target-to-substrate distance. The target-to-substrate distance for depositing was , and for depositing ITO and . The leakage current density of the thick films under field strength was less than . The measurement of the capacitor structure showed that no hysteresis voltage was observed from the high-resistivity films. This indicated that the electrical defects of the thick channels could be reduced using the long-throw deposition technique. In addition, the TTFTs were engineered to operate in the enhancement mode with improved carrier mobility by adjusting the oxygen partial pressure during growth. The proposed TTFTs with a channel length presented a saturation mobility of , a threshold voltage of , an on/off ratio of , and a subthreshold slope of /decade.
Skip Nav Destination
Article navigation
January 2010
Research Article|
February 23 2010
Indium oxide thin film transistors fabricated by low-energetic ion bombardment technique at room temperature
A. K. Chu;
A. K. Chu
Department of Photonics and Semiconductor Technology Research and Development Center,
National Sun Yat-sen University
, Kaohsiung, 804, Taiwan
Search for other works by this author on:
T. I. Hong;
T. I. Hong
Department of Photonics and Semiconductor Technology Research and Development Center,
National Sun Yat-sen University
, Kaohsiung, 804, Taiwan
Search for other works by this author on:
W. C. Tien
W. C. Tien
a)
Department of Photonics and Semiconductor Technology Research and Development Center,
National Sun Yat-sen University
, Kaohsiung, 804, Taiwan
Search for other works by this author on:
a)
Electronic mail: [email protected]
J. Vac. Sci. Technol. B 28, 211–215 (2010)
Article history
Received:
September 10 2009
Accepted:
December 07 2009
Citation
A. K. Chu, T. I. Hong, W. C. Tien; Indium oxide thin film transistors fabricated by low-energetic ion bombardment technique at room temperature. J. Vac. Sci. Technol. B 1 January 2010; 28 (1): 211–215. https://doi.org/10.1116/1.3280130
Download citation file:
Pay-Per-View Access
$40.00
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Citing articles via
Future of plasma etching for microelectronics: Challenges and opportunities
Gottlieb S. Oehrlein, Stephan M. Brandstadter, et al.
Transferable GeSn ribbon photodetectors for high-speed short-wave infrared photonic applications
Haochen Zhao, Suho Park, et al.
Machine learning driven measurement of high-aspect-ratio nanostructures using Mueller matrix spectroscopic ellipsometry
Shiva Mudide, Nick Keller, et al.
Related Content
Transparent thin-film transistors with zinc indium oxide channel layer
J. Appl. Phys. (March 2005)
Transparent thin-film transistors with pentacene channel, Al O x gate, and Ni O x electrodes
Appl. Phys. Lett. (March 2005)
High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer
Appl. Phys. Lett. (December 2004)
Scaling behavior of ZnO transparent thin-film transistors
Appl. Phys. Lett. (July 2006)
Electric field thermopower modulation analyses of the operation mechanism of transparent amorphous SnO2 thin-film transistor
Appl. Phys. Lett. (April 2020)