Hot carrier degradation in $HfSiON∕TiN$ fin shaped field effect transistor with different substrate orientations

Hot carrier injection (HCI) degradation is evaluated for $n$-metal oxide semiconductor (MOS) and $pMOS$ high-$κ$-fin shaped field effect transistor with (100) and (110) sidewall surface orientations. It was found that impact ionization at the source, in addition to the traditional drain side enhances HCI degradation for the $Vg=Vd$ condition. The degradation increases with decreasing fin length, with negligible dependence on substrate orientation.