Interfacial and electrical properties of $ZrxTi1−xO4$ $(x=0.66)$ films deposited by liquid-delivery metal organic chemical vapor deposition to be used as high-$k$ gate dielectric

$ZrxTi1−xO4$ $(x=0.66)$ films were deposited on $p$-type Si (100) substrate using liquid-delivery metal organic chemical vapor deposition using $Zr(O–C3H7)2{(C11H19O2)2}$ and $Ti(O–C3H7)2{(C11H19O2)2}$ precursors. Postdeposition rapid thermal annealing was performed in $N2$ ambient to improve the electrical characteristics of the films. The postdeposition annealed samples show excellent electrical characteristics, such as low values of effective oxide charge density, flatband voltage, hysteresis, oxide trap charge density, and interface state density. No metal silicides were found in the films. A minimum leakage current density of the order of $∼10−5A∕cm2$ at a bias voltage of $−1V$ has been obtained even after annealing at $800°C$⁠.