The creation of stable, highly conductive ultrashallow junctions in strained Si is a key requirement for future Si based devices. It is shown that in the presence of tensile strain, Sb becomes a strong contender to replace As as the dopant of choice due to advantages in junction depth, junction steepness, and crucially, sheet resistance. While 0.7% strain reduces resistance for both As and Sb, a result of enhanced electron mobility, the reduction is significantly larger for Sb due to an increase in donor activation. Differential Hall and secondary-ion mass spectroscopy measurements suggest this to be a consequence of a strain-induced Sb solubility enhancement following epitaxial regrowth, increasing Sb solubility in Si to levels approaching . Advantages in junction depth, junction steepness, and dopant activation make Sb an interesting alternative to As for ultrashallow doping in strain-engineered complementary metal-oxide semiconductor devices.
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January 2008
This content was originally published in
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
International Workshop on Insight in Semiconductor Device Fabrication, Metrology and Modeling (Insight 2007)
6-9 May 2007
Napa, California
Research Article|
January 31 2008
Antimony for -type metal oxide semiconductor ultrashallow junctions in strained Si: A superior dopant to arsenic?
N. S. Bennett;
N. S. Bennett
a)
Advanced Technology Institute,
University of Surrey
, Guildford GU2 7XH, United Kingdom
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A. J. Smith;
A. J. Smith
Advanced Technology Institute,
University of Surrey
, Guildford GU2 7XH, United Kingdom
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R. M. Gwilliam;
R. M. Gwilliam
Advanced Technology Institute,
University of Surrey
, Guildford GU2 7XH, United Kingdom
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R. P. Webb;
R. P. Webb
Advanced Technology Institute,
University of Surrey
, Guildford GU2 7XH, United Kingdom
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B. J. Sealy;
B. J. Sealy
Advanced Technology Institute,
University of Surrey
, Guildford GU2 7XH, United Kingdom
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N. E. B. Cowern;
N. E. B. Cowern
Institute for Nanoscale Science and Technology,
University of Newcastle
, Newcastle upon Tyne NE1 7RU, United Kingdom
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L. O’Reilly;
L. O’Reilly
Nanomaterials Processing Laboratory,
Dublin City University
, Dublin 9, Ireland
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P. J. McNally
P. J. McNally
Nanomaterials Processing Laboratory,
Dublin City University
, Dublin 9, Ireland
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a)
Electronic mail: nicholas.bennett@surrey.ac.uk
J. Vac. Sci. Technol. B 26, 391–395 (2008)
Article history
Received:
June 01 2007
Accepted:
October 30 2007
Citation
N. S. Bennett, A. J. Smith, R. M. Gwilliam, R. P. Webb, B. J. Sealy, N. E. B. Cowern, L. O’Reilly, P. J. McNally; Antimony for -type metal oxide semiconductor ultrashallow junctions in strained Si: A superior dopant to arsenic?. J. Vac. Sci. Technol. B 1 January 2008; 26 (1): 391–395. https://doi.org/10.1116/1.2816929
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