Preorganized pixel-forming photoresists were prepared to investigate the effect of well-defined material structures and the spatial distribution of photoacid on line edge roughness of chemically amplified photoresists. Asymmetric poly(styrene)-block-poly(-butylacrylate) diblock copolymers, which formed PS cylinders or spheres within a matrix, were used as photoresists by adding catalytic amounts of photoacid generators (PAGs). PAGs resided only in the matrix domain, resulting in the PAG chemistry occurring only in the matrix domain. The pixelated photoresists showed a significant solubility switch after UV or x-ray exposure and postexposure bake, such that the polymer in the exposed regions dissolved in aqueous base solution. Granular structures that were matched with the domain spacing and structure of the block copolymer photoresists were observed on the edge of the patterned features. This model system demonstrated that line edge roughness is directly correlated to the structure of pixelated photoresist materials.
Skip Nav Destination
,
,
,
,
,
,
Article navigation
November 2007
This content was originally published in
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
Research Article|
December 11 2007
Pixelated chemically amplified resists: Investigation of material structure on the spatial distribution of photoacids and line edge roughness
Young-Hye La;
Young-Hye La
Department of Chemical and Biological Engineering, and Center for NanoTechnology,
University of Wisconsin
, Madison, Wisconsin 53706
Search for other works by this author on:
Insik-In;
Insik-In
Department of Material Science and Engineering,
University of Wisconsin
, Madison, Wisconsin 53706
Search for other works by this author on:
Sang-Min Park;
Sang-Min Park
Department of Chemical and Biological Engineering, and Center for NanoTechnology,
University of Wisconsin
, Madison, Wisconsin 53706
Search for other works by this author on:
Robert P. Meagley;
Robert P. Meagley
Intel Corporation and Lawrence Berkeley National Laboratory
, #1 Cyclotron Rd., Berkeley, California 94708
Search for other works by this author on:
Melvina Leolukman;
Melvina Leolukman
b)
Department of Material Science and Engineering,
University of Wisconsin
, Madison, Wisconsin 53706
Search for other works by this author on:
Padma Gopalan;
Padma Gopalan
Department of Material Science and Engineering,
University of Wisconsin
, Madison, Wisconsin 53706
Search for other works by this author on:
Paul F. Nealey
Paul F. Nealey
a)
Department of Chemical and Biological Engineering, and Center for NanoTechnology,
University of Wisconsin
, Madison, Wisconsin 53706
Search for other works by this author on:
Young-Hye La
Insik-In
Sang-Min Park
Robert P. Meagley
Melvina Leolukman
b)
Padma Gopalan
Paul F. Nealey
a)
Department of Chemical and Biological Engineering, and Center for NanoTechnology,
University of Wisconsin
, Madison, Wisconsin 53706a)
Author to whom correspondence should be addressed; electronic mail: [email protected]
b)
Electronic mail: [email protected]
J. Vac. Sci. Technol. B 25, 2508–2513 (2007)
Article history
Received:
June 08 2007
Accepted:
September 24 2007
Citation
Young-Hye La, Insik-In, Sang-Min Park, Robert P. Meagley, Melvina Leolukman, Padma Gopalan, Paul F. Nealey; Pixelated chemically amplified resists: Investigation of material structure on the spatial distribution of photoacids and line edge roughness. J. Vac. Sci. Technol. B 1 November 2007; 25 (6): 2508–2513. https://doi.org/10.1116/1.2800330
Download citation file:
Pay-Per-View Access
$40.00
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Citing articles via
Future of plasma etching for microelectronics: Challenges and opportunities
Gottlieb S. Oehrlein, Stephan M. Brandstadter, et al.
Transferable GeSn ribbon photodetectors for high-speed short-wave infrared photonic applications
Haochen Zhao, Suho Park, et al.
Exploring SiC CVD growth parameters compatible with remote epitaxy
Daniel J. Pennachio, Jenifer R. Hajzus, et al.
Related Content
Micromolar concentrations of base quenchers impact the apparent efficiency of photoacid generation in chemically amplified resists
J. Vac. Sci. Technol. B (October 2002)
Useful protocol for evaluating subtle and important differences between photoresist formulations
J. Vac. Sci. Technol. B (April 2004)
Effect of photoacid generator concentration on sensitivity, photoacid generation, and deprotection of chemically amplified resists
J. Vac. Sci. Technol. B (December 2002)
Effects of photoacid generator incorporation into the polymer main chain on 193 nm chemically amplified resist behavior and lithographic performance
J. Vac. Sci. Technol. B (December 2007)
Measurements of acid generation by extreme ultraviolet irradiation in lithographic films
J. Vac. Sci. Technol. B (December 2007)