The stability of junctions remains a critical issue for device performance. Shallow junctions formed by low temperature solid phase epitaxy growth (LTSPEG) are not stable during additional thermal processes. Anomalous boron diffusion and boron trapping by end-of-range defects are observed during additional furnace annealing. The study shows that, by adding a (MeV) implantation step before LTSPEG, B trapping and B diffusion are significantly reduced during post-LTSPEG annealing. The technique can be used as a method to increase the stability of shallow junctions formed by LTSPEG.
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