Kinetics of gallium adlayer adsorption/desorption on polar and nonpolar GaN surfaces

Spectroscopic ellipsometry installed on a GEN-II plasma assisted molecular beam epitaxy machine has been shown to be an effective in situ real time tool for monitoring the kinetics of gallium adlayer adsorption/desorption on the GaN surface. In this work, the authors present data on the study of Ga adsorption/desorption on polar $c$-plane GaN (0001) and nonpolar $m$-plane GaN $(1−100)$ surfaces for Ga beam equivalent pressures in the range of $8.96×10−8–1.86×10−7Torr$⁠, Ga pulses in the range of $5–360s$⁠, and for substrate temperatures between 650 and $750°C$⁠.