A triple step alignment process for UV nanoimprint lithography (UV-NIL) for the fabrication of nanoscale fin field effect transistors (FinFETs) is presented. An alignment accuracy is demonstrated between two functional layers of less than . The electrical characterization of the FinFETs fabricated by a full NIL process demonstrates the potential of UV-NIL for future nanoelectronic devices.
REFERENCES
1.
B.
Vratzov
et al., J. Vac. Sci. Technol. B
21
, 2760
(2003
).2.
M.
Colburn
et al., Proc. SPIE
3676
, 379
(1999
).3.
4.
D.
Hisamoto
et al., IEEE Trans. Electron Devices
47
, 2320
(2000
).5.
6.
R.
Chau
et al., International Conference on Solid State Devices and Materials
, Nagoya
, Japan, 2002
(unpublished).7.
A.
Fuchs
et al., J. Vac. Sci. Technol. B
22
, 3242
(2004
).8.
D. C.
Flanders
et al., Appl. Phys. Lett.
31
, 426
(1977
).9.
A.
Fuchs
et al., J. Vac. Sci. Technol. B
23
, 2925
(2005
).10.
K.
Patorski
and M.
Kujawinska
, Handbook of the Moiré Fringe Technique
(Elsevier
, Amsterdam
, 1993
).11.
12.
© 2006 American Vacuum Society.
2006
American Vacuum Society
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