ZnO nanorod arrays fabricated on ZnO buffer layers on Si wafers were grown using a low-temperature solution method and were characterized by various techniques. Buffer layers were prepared using metal organic chemical vapor deposition and a sputter-oxidation method. Aligned ZnO nanorods were deposited at on the substrates by a hydrothermal treatment using a zinc salt and aqueous ammonia solution. The ZnO nanorod arrays were characterized by scanning electron microscopy, x-ray diffraction, x-ray photoelectron spectroscopy, Raman spectroscopy, and photoluminescence spectroscopy. The as-grown ZnO nanorod arrays exhibited broad deep-level emission centered at . The intensity of the deep-level emission decreased and band edge emission centered at appeared after air annealing. Samples annealed in hydrogen showed only band edge emission.
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July 2006
This content was originally published in
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
Research Article|
July 25 2006
Characterization of ZnO nanorod arrays fabricated on Si wafers using a low-temperature synthesis method
Youngjo Tak;
Youngjo Tak
Electrical and Computer Engineering Division, Department of Chemical Engineering,
Pohang University of Science and Technology
, Pohang 790-784, Korea
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Dongseok Park;
Dongseok Park
Electrical and Computer Engineering Division, Department of Chemical Engineering,
Pohang University of Science and Technology
, Pohang 790-784, Korea
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Kijung Yong
Kijung Yong
a)
Electrical and Computer Engineering Division, Department of Chemical Engineering,
Pohang University of Science and Technology
, Pohang 790-784, Korea
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a)
Author to whom correspondence should be addressed; electronic mail: [email protected]
J. Vac. Sci. Technol. B 24, 2047–2052 (2006)
Article history
Received:
January 15 2006
Accepted:
April 03 2006
Citation
Youngjo Tak, Dongseok Park, Kijung Yong; Characterization of ZnO nanorod arrays fabricated on Si wafers using a low-temperature synthesis method. J. Vac. Sci. Technol. B 1 July 2006; 24 (4): 2047–2052. https://doi.org/10.1116/1.2216714
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