Mask protection from particulate contaminants is one of the most serious concerns for the success of deploying extreme ultraviolet lithography (EUVL) technology for future semiconductor manufacturing. Standard pellicles are not applicable for an EUVL mask surface because of the high absorption of the EUV beam by any material. Therefore, methods such as thermophoresis and electrophoresis are desirable for protection, instead of using organic membrane pellicles. A reverse flow concept by introducing differential pressure between different operating zones (mask zone with higher pressure and optics zone with lower pressure) is introduced for protection of critical surfaces against particulate contamination. In this study, we show systematic investigations of the differential pressure effect on the protection of critical surfaces using polystyrene latex spheres at a chamber pressure of , whereas the critical surface zone pressure was varied up to . We found that a higher particle speed needs a higher differential pressure between the mask zone and the optics zone to protect the mask from incoming particles. The higher differential pressure and higher relative flow velocity for the reverse flow provide more drag force for particles to stop before reaching the critical surface. The particles having an injection speed of up to could be completely repelled using the differential pressure approach, but the deposition of particles with a speed of is hardly prevented by this reverse flow concept. Different gases showed different amounts of protection efficiency due to the change of gas properties such as density and molecular weight. Argon showed better protection efficiency against particle contamination than air. By drag force comparison, argon has about 18% higher drag force than air. The experimental results showed that argon reduced the particle deposition between 6% and 50%, depending on the particle injection speed and the differential pressures.
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July 2006
This content was originally published in
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
Research Article|
June 30 2006
Effect of reverse flow by differential pressure on the protection of critical surfaces against particle contamination
Jung Hyeun Kim;
Jung Hyeun Kim
a)
90 Jeonnongdong, Dongdaemungu, Department of Chemical Engineering,
University of Seoul
, Seoul 130-743, Korea
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Heinz Fissan;
Heinz Fissan
Institut für Energie und Umwelttechnik e.V. (IUTA)
, Bliersheimer Strasse 60, 47229 Duisburg, Germany
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Christof Asbach;
Christof Asbach
Institut für Energie und Umwelttechnik e.V. (IUTA)
, Bliersheimer Strasse 60, 47229 Duisburg, Germany
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Se-Jin Yook;
Se-Jin Yook
111 Church Street, Particle Technology Laboratory, Department of Mechanical Engineering,
University of Minnesota
, Minneapolis, Minnesota 55455
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Jing Wang;
Jing Wang
111 Church Street, Particle Technology Laboratory, Department of Mechanical Engineering,
University of Minnesota
, Minneapolis, Minnesota 55455
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David Y. H. Pui
David Y. H. Pui
b)
111 Church Street, Particle Technology Laboratory, Department of Mechanical Engineering,
University of Minnesota
, Minneapolis, Minnesota 55455
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Jung Hyeun Kim
a)
Heinz Fissan
Christof Asbach
Se-Jin Yook
Jing Wang
David Y. H. Pui
b)
90 Jeonnongdong, Dongdaemungu, Department of Chemical Engineering,
University of Seoul
, Seoul 130-743, Koreaa)
Electronic mail: [email protected]
b)
Electronic mail: [email protected]
J. Vac. Sci. Technol. B 24, 1844–1849 (2006)
Article history
Received:
April 12 2006
Accepted:
May 23 2006
Citation
Jung Hyeun Kim, Heinz Fissan, Christof Asbach, Se-Jin Yook, Jing Wang, David Y. H. Pui; Effect of reverse flow by differential pressure on the protection of critical surfaces against particle contamination. J. Vac. Sci. Technol. B 1 July 2006; 24 (4): 1844–1849. https://doi.org/10.1116/1.2214712
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