In this article, we report on growth of AlInNGaInN multi-quantum-wells (MQWs) with high Al content (93%) by rf-plasma-assisted molecular-beam epitaxy on (0001) GaN/sapphire templates and on bulk GaN crystals. A series of samples with a barrier thickness of 3nm and with different well thicknesses of 1.53nm was grown. The wells were doped with Si at a concentration of 5×1019cm3. Structures grown on (0001) GaN-based substrates are crack-free, as demonstrated by Nomarski contrast and scanning electron microscopy measurements. X-ray diffraction mapping of a and c lattice parameters shows that AlInNGaInN MQWs are fully strained and have up to 7% indium in the barriers and up to 10% In in the quantum wells. These structures exhibit intersubband absorptions at room temperature at a wavelength in the range of 2.451.52μm. The AlInNGaInN strain-compensated MQW structures, having good quality, are very attractive for ultrahigh-bit-rate telecommunication applications at 1.55μm wavelengths. In addition, because of their low average refractive index, they could be used as thick cladding layers for optical waveguides.

1.
N.
Iizuka
,
K.
Kaneko
,
N.
Suzuki
,
T.
Asano
,
S.
Noda
, and
O.
Wada
,
Appl. Phys. Lett.
77
,
648
(
2000
).
2.
R.
Rapaport
,
C.
Gang
,
O.
Mitrofanov
,
C.
Gmachl
,
H. M.
Ng
, and
S.-N. G.
Chu
,
Appl. Phys. Lett.
83
,
263
(
2003
).
3.
M.
Ting
,
G.
Karunasiri
, and
S. J.
Chua
,
Appl. Phys. Lett.
71
,
2017
(
1997
).
4.
J. C.
Chiang
,
S. S.
Li
, and
A.
Singh
,
Appl. Phys. Lett.
71
,
3546
(
1997
).
5.
H. C.
Liu
,
C. Y.
Song
,
A. J.
SpringThorpe
, and
J. C.
Cao
,
Appl. Phys. Lett.
84
,
4068
(
2004
).
6.
H. M.
Ng
,
C.
Gmachl
,
S.-N. G.
Chu
, and
A. Y.
Cho
,
J. Cryst. Growth
220
,
432
(
2000
).
7.
K.
Kishino
,
A.
Kikuchi
,
H.
Kanazawa
, and
T.
Tachibana
,
Appl. Phys. Lett.
81
,
1234
(
2002
).
8.
C.
Gmachl
 et al,
Physica E (Amsterdam)
13
,
823
(
2002
).
9.
A.
Helman
 et al,
Appl. Phys. Lett.
83
,
5196
(
2003
).
10.
J.
Hamazaki
,
S.
Matsui
,
H.
Kunugita
,
K.
Ema
,
H.
Kanazawa
,
T.
Tachibana
,
A.
Kikuchi
, and
K.
Kishino
,
Appl. Phys. Lett.
84
,
1102
(
2004
).
11.
J.
Hamazaki
,
H.
Kunugita
,
K.
Ema
,
A.
Kikuchi
, and
K.
Kishino
,
Phys. Rev. B
71
,
165334
(
2005
).
12.
I.
Friel
,
K.
Driscoll
,
E.
Kulenica
,
M.
Dutta
,
R.
Paiella
, and
T. D.
Moustakas
,
J. Cryst. Growth
278
,
387
(
2005
).
13.
J.
Carlin
and
M.
Ilegems
,
Appl. Phys. Lett.
83
,
668
(
2003
).
14.
I.
Grzegory
and
S.
Porowski
,
Thin Solid Films
367
,
281
(
2000
).
15.
I.
Grzegory
,
J. Phys.: Condens. Matter
13
,
6875
(
2001
).
You do not currently have access to this content.