The Cu/barrier/low- structures were fabricated and their thermal stability was investigated. SiCOH films were deposited by plasma-enhanced chemical vapor deposition using divinyldimethylsilane (DVDMS) and . As barrier materials, tungsten and tungsten nitride films were deposited by chemical vapor deposition using and sources at . Variations of scanning electron microscopy and x-ray diffraction results of Cu/barrier/low- were examined depending on the annealing temperature. Both results showed that W and film were stable up to 500 and above , nanorods were grown from the sample surface. It is thought that the thermal stability of the Cu/barrier/ structure is closely related with the thermal destruction of the W and films.
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