The Cu/barrier/low-kSiCOHSi structures were fabricated and their thermal stability was investigated. SiCOH films were deposited by plasma-enhanced chemical vapor deposition using divinyldimethylsilane (DVDMS) and O2. As barrier materials, tungsten and tungsten nitride films were deposited by chemical vapor deposition using W(CO)6 and NH3 sources at 450°C. Variations of scanning electron microscopy and x-ray diffraction results of Cu/barrier/low-kSiCOHSi were examined depending on the annealing temperature. Both results showed that W and W2N film were stable up to 500 and above 600°C, WO3 nanorods were grown from the sample surface. It is thought that the thermal stability of the Cu/barrier/SiCOHSi structure is closely related with the thermal destruction of the W and WNx films.

1.
C. K.
Hu
,
B.
Luther
,
F. B.
Kaufman
,
J.
Hummel
,
C.
Uzoh
, and
D. J.
Pearson
,
Thin Solid Films
262
,
84
(
1995
).
2.
R. J.
Gutmann
,
T. P.
Chow
,
A. E.
Kaloyeros
,
W. A.
Lanford
, and
S. P.
Muraka
,
Thin Solid Films
262
,
177
(
1995
).
3.
L.
Vanasupa
,
Y.-C.
Joo
, and
P. R.
Besser
,
J. Appl. Phys.
85
,
2583
(
1999
).
4.
K.
Kim
and
K.
Yong
,
Electrochem. Solid-State Lett.
6
,
C106
(
2003
).
5.
C. H.
Winter
,
Aldrichmica Acta
33
,
3
(
2000
).
6.
S. J.
Wang
,
H. Y.
Tsai
, and
S. C.
Sun
,
Thin Solid Films
394
,
180
(
2001
).
7.
B. H.
Lee
and
K.
Yong
,
J. Electrochem. Soc.
151
,
C594
(
2004
).
8.
G.
Erdelyi
 et al.,
Thin Solid Films
459
,
303
(
2004
).
9.
L. Y.
Yang
,
D. H.
Zhang
,
C. Y.
Li
, and
P. D.
Foo
,
Thin Solid Films
462
,
176
(
2004
).
10.
Y. H.
Shin
and
Y.
Shimogaki
,
Sci. Technol. Adv. Mater.
5
,
399
(
2004
).
11.
N.
Gonohe
,
Mater. Trans., JIM
43
,
1585
(
2002
).
12.
M.
Morgen
,
E. T.
Ryan
,
J. H.
Zhao
,
C.
Hu
,
T.
Cho
, and
P. S.
Ho
,
Annu. Rev. Mater. Sci.
30
,
645
(
2000
).
13.
14.
K.
Jeong
,
S.
Park
, and
S.
Rhee
,
J. Vac. Sci. Technol. B
22
,
2799
(
2004
).
15.
C.
Klinke
,
J. B.
Hannon
,
L.
Gignac
,
K.
Reuter
, and
P.
Avouris
,
J. Phys. Chem. B
109
,
17787
(
2005
).
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