Hf-silicate/ bilayers were grown on Si(100) by atomic layer chemical vapor deposition. High-resolution transmission electron microscopy and atomic force microscopy images of Hf-silicate/ samples showed very flat interfaces and uniform amorphous characteristics. Unlike Hf-silicate/Si samples, Hf-rich silicate phases or Hf-silicide dislocations were not observed in Hf-silicate/ samples. The valence band offset was increased from 3.26 (Hf-silicate) to ( buffer layer). These buffer layer effects were strongly related to the decrease of leakage current in Hf-silicate/ films compared to Hf-silicate films.
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