Silicon nanorods in diameter are fabricated by reactive ion etch (RIE) to study anisotropy and damage profile in decananometer scale. RIE of gas mixture of and is tuned to achieve high anisotropy. The gas specie of can reach 90% anisotropy, 84° taper angle, and 10:1 selectivity when is used as the etching mask. The gas species of can reach 95% anisotropy, 87° taper angle, and 10:1 selectivity with Cr as the mask. The fabrication technique of nanorods uses a monolayer of silicon dioxide nanoparticle as the etching mask. The nanorods uniformly cover up the entire wafers with high density of . Surface damageafter the etching process of nanostructures is monitored using the microwave-reflectance photoconductance decay with KOH removal-and-probe technique. Highly damaged silicon is found within a depth of and the lightly damaged part extends more than .
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Research Article| February 17 2006
Use of nanoparticles as etch mask to generate Si nanorods by reactive ion etch
Eih-Zhe Liang, Chao-Jei Huang, Ching-Fuh Lin; Use of nanoparticles as etch mask to generate Si nanorods by reactive ion etch. J. Vac. Sci. Technol. B 1 March 2006; 24 (2): 599–603. https://doi.org/10.1116/1.2172251
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