We addressed the issues related to quantitative carrier profiling by scanning capacitance microscopy (SCM) on doped layers with different dimensions, starting from thick uniformly B-doped Si layers, down to quantum wells with nanometric width. We preliminarly discussed the influence of the SCM hardware on the quantification, by comparing the analyses performed on Si calibration standards with two different atomic force microscopes, i.e., DI3100 by Veeco and XE-100 by PSIA, equipped with different SCM sensors. Furthermore, both concentration and spatial resolution are demonstrated by measurements on specially designed samples containing B-doped quantum wells of layers strained between Si films. Measurements were taken both on cross-sectioned samples and on beveled ones. A SCM spatial resolution of with a concentration sensitivity from 5% to 10% was demonstrated by quantitative majority carrier profiling on the B-doped heterostructures.
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January 2006
This content was originally published in
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
Research Article|
January 26 2006
Scanning capacitance microscopy: Quantitative carrier profiling down to nanostructures
F. Giannazzo;
F. Giannazzo
a)
CNR-IMM
, sezione di Catania, Stradale Primosole 50, 95121 Catania, Italy
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V. Raineri;
V. Raineri
CNR-IMM
, sezione di Catania, Stradale Primosole 50, 95121 Catania, Italy
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S. Mirabella;
S. Mirabella
CNR-MATIS-INFM and Dipartimento di Fisica e Astronomia,
Università di Catania
, Via S. Sofia 64, 95123 Catania, Italy
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G. Impellizzeri;
G. Impellizzeri
CNR-MATIS-INFM and Dipartimento di Fisica e Astronomia,
Università di Catania
, Via S. Sofia 64, 95123 Catania, Italy
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F. Priolo;
F. Priolo
CNR-MATIS-INFM and Dipartimento di Fisica e Astronomia,
Università di Catania
, Via S. Sofia 64, 95123 Catania, Italy
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M. Fedele;
M. Fedele
2M Strumenti
, Via G. Pontano 9, 00141 Roma, Italy
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R. Mucciato
R. Mucciato
2M Strumenti
, Via G. Pontano 9, 00141 Roma, Italy
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a)
Author to whom correspondence should be addressed; electronic mail: giannazzo@imm.cnr.it
J. Vac. Sci. Technol. B 24, 370–374 (2006)
Article history
Received:
July 08 2005
Accepted:
November 21 2005
Citation
F. Giannazzo, V. Raineri, S. Mirabella, G. Impellizzeri, F. Priolo, M. Fedele, R. Mucciato; Scanning capacitance microscopy: Quantitative carrier profiling down to nanostructures. J. Vac. Sci. Technol. B 1 January 2006; 24 (1): 370–374. https://doi.org/10.1116/1.2151907
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