Fabrication of a $Si∕SiO2$ multiple-quantum-well light emitting diode using remote plasma enhanced chemical vapor deposition

Photoluminescence (PL) and electroluminescence (EL) measurements are performed on $Si∕SiO2$ multiple quantum wells fabricated by using a combination of remote plasma enhanced chemical vapor deposition (RPECVD) and rapid thermal annealing (RTA). A significant enhancement of light emission is observed from nanocrystalline Si wells embedded in a $SiO2$ matrix. The enhancement depends critically on additional annealing processes carried out after the RPECVD deposition.