A large quantity of highly uniform SiC nanowires was directly synthesized from Si substrates using a thermal heating method. The atomic structure, morphology, and composition of the SiC nanowires were strongly dependent on the ambient gases (Ar,N2) used during nanowire growth. The nanowires grown in Ar were coated with amorphous carbon layers while the nanowires grown in N2 had no coating layers. Also, nitrogen and oxygen were incorporated only into SiC nanowires grown in N2. A proposed model for the role of ambient gases in the SiC nanowire growth is discussed.

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