In this work, a procedure to determine the spatial resolution in scanning capacitance (SCM) and scanning spreading resistance microscopy (SSRM) is proposed and demonstrated. It is based on profiling of confined carriers (in cross section) in quantum well (QW) structures consisting of QWs with different well widths and interwell spacing. Spatial resolution of sub-5 nm was observed for SSRM with commercially available diamond-coated silicon probes and sub-30 nm for SCM with -coated probes. The influence of experimental parameters such as tip–sample bias and tip averaging on lateral resolution is discussed and appropriate measurement conditions for performing high-resolution measurements are highlighted. Finally, it is proposed that such structures can be used not only to select probes appropriate for high resolution measurements, but also in the development of new probes.
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January 2005
This content was originally published in
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
Research Article|
December 28 2004
Determination of spatial resolution in atomic-force-microscopy-based electrical characterization techniques using quantum well structures
O. Douhéret;
O. Douhéret
a)
Department of Microelectronics and Information Technology, Laboratory of Materials and Semiconductor Physics, Royal Institute of Technology
, Electrum 229, S-164-40 Kista, Sweden
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S. Bonsels;
S. Bonsels
Department of Microelectronics and Information Technology, Laboratory of Materials and Semiconductor Physics, Royal Institute of Technology
, Electrum 229, S-164-40 Kista, Sweden
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S. Anand
S. Anand
Department of Microelectronics and Information Technology, Laboratory of Materials and Semiconductor Physics, Royal Institute of Technology
, Electrum 229, S-164-40 Kista, Sweden
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a)
Electronic mail: [email protected]
J. Vac. Sci. Technol. B 23, 61–65 (2005)
Article history
Received:
August 06 2004
Accepted:
October 25 2004
Citation
O. Douhéret, S. Bonsels, S. Anand; Determination of spatial resolution in atomic-force-microscopy-based electrical characterization techniques using quantum well structures. J. Vac. Sci. Technol. B 1 January 2005; 23 (1): 61–65. https://doi.org/10.1116/1.1835317
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