High resolution electron beam lithography using a chemically amplified calix[4]arene based resist

The calix[4]arene based resist tetrakis(oxiran-2-ylmethoxy)-tetra-tert-butylcalix[4]arene is presented. The well known chemical amplification techniques can be applied to the nonpolymeric class of calixarenes resulting in area doses below $100μC∕cm2$ at $30keV$ beam energy. This is achieved by application of the concept of cationic polymerization to a calix[4]arene derivative bearing four epoxide residues together with a photoacid generating triarylsulfonium salt. The high resolution capabilities of this calixarene based resist remain mainly intact under optimized bake parameters.