One of the technical challenges for introducing extreme ultraviolet lithography (13.5 nm) into high volume manufacturing is flare. Flare reduces aerial image contrast and creates critical dimension (CD) variations across the die due to local chrome density dependent flare variations. Therefore, it is important to experimentally characterize flare on a full-field stepper and develop methods to mitigate and compensate for its effects. In this article, the impact of flare on depth of focus and exposure latitude are experimentally quantified using the engineering test stand. In addition, we report a marked increase in line width roughness due to high levels of flare in the optical system. A technique for the extraction of the point spread function due to scatter using density dependent CD data has been demonstrated for more accurate flare variation compensation.
Skip Nav Destination
Article navigation
November 2004
This content was originally published in
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
The 48th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication
1-4 June 2004
San Diego, California (USA)
Research Article|
December 10 2004
Effects of flare in extreme ultraviolet lithography: Learning from the engineering test standa) Available to Purchase
Manish Chandhok;
Manish Chandhok
b)
Intel Corporation
, MS: RA3-252, 5200 NE Elam Young Pkwy, Hillsboro, Oregon 97124
Search for other works by this author on:
Sang H. Lee;
Sang H. Lee
Intel Corporation
, MS: RA3-252, 5200 NE Elam Young Pkwy, Hillsboro, Oregon 97124
Search for other works by this author on:
Terence Bacuita
Terence Bacuita
Intel Corporation
, MS: RA3-252, 5200 NE Elam Young Pkwy, Hillsboro, Oregon 97124
Search for other works by this author on:
Manish Chandhok
b)
Intel Corporation
, MS: RA3-252, 5200 NE Elam Young Pkwy, Hillsboro, Oregon 97124
Sang H. Lee
Intel Corporation
, MS: RA3-252, 5200 NE Elam Young Pkwy, Hillsboro, Oregon 97124
Terence Bacuita
Intel Corporation
, MS: RA3-252, 5200 NE Elam Young Pkwy, Hillsboro, Oregon 97124b)
Electronic mail: [email protected]
a)
No proof corrections received from author prior to publication.
J. Vac. Sci. Technol. B 22, 2966–2969 (2004)
Article history
Received:
September 17 2004
Accepted:
October 05 2004
Citation
Manish Chandhok, Sang H. Lee, Terence Bacuita; Effects of flare in extreme ultraviolet lithography: Learning from the engineering test stand. J. Vac. Sci. Technol. B 1 November 2004; 22 (6): 2966–2969. https://doi.org/10.1116/1.1824068
Download citation file:
Pay-Per-View Access
$40.00
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Citing articles via
Future of plasma etching for microelectronics: Challenges and opportunities
Gottlieb S. Oehrlein, Stephan M. Brandstadter, et al.
Vertical silicon nanowedge formation by repetitive dry and wet anisotropic etching combined with 3D self-aligned sidewall nanopatterning
Yasser Pordeli, Céline Steenge, et al.
Heating of photocathode via field emission and radiofrequency pulsed heating: Implication toward breakdown
Ryo Shinohara, Soumendu Bagchi, et al.
Related Content
Lithographic flare measurements of Intel’s microexposure tool optics
J. Vac. Sci. Technol. B (January 2006)
Experimental validation of full-field extreme ultraviolet lithography flare and shadowing corrections
J. Vac. Sci. Technol. B (December 2008)
Extreme ultraviolet lithography at IMEC: Shadowing compensation and flare mitigation strategy
J. Vac. Sci. Technol. B (December 2007)
Metrology development for extreme ultraviolet lithography: Flare and out-of-band qualification
J. Vac. Sci. Technol. B (November 2011)
Lithographic performance evaluation of a contaminated extreme ultraviolet mask after cleaning
J. Vac. Sci. Technol. B (July 2010)