Tungsten nitride is a potentially strong candidate for diffusion barrier. The films were deposited by chemical vapor deposition (CVD) using and sources at . The diffusion barrier properties of were investigated by comparison with other materials. In order to study the barrier properties, /barrier/substrate structures were fabricated. A -thick film was deposited by evaporation onto various barrier materials including , , and sputter-deposited , and . After annealing for in argon, variations in the film sheet resistances and the x-ray diffraction patterns were examined. Both results showed that a -thick film prevented diffusion up to , and started to fail at , while no barrier and the barrier samples failed at and , respectively. Also, sputtered , and films failed at , , and , respectively, in our annealing conditions. From these results, our , deposited by CVD using the simple, nonfluorine precursor, , can be evaluated as a competent diffusion barrier candidate.
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September 2004
This content was originally published in
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
Research Article|
October 07 2004
Diffusion barrier properties of metalorganic chemical vapor deposition compared with other barrier materials
Brad H. Lee;
Brad H. Lee
Electrical and Computer Engineering Division, Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH)
, San 31, Hyoja-dong, Nam-gu, Pohang, Kyungbuk 790-784, Korea
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Kijung Yong
Kijung Yong
a)
Electrical and Computer Engineering Division, Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH)
, San 31, Hyoja-dong, Nam-gu, Pohang, Kyungbuk 790-784, Korea
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a)
Author to whom all correspondence should be addressed; electronic mail: [email protected]
J. Vac. Sci. Technol. B 22, 2375–2379 (2004)
Article history
Received:
February 13 2004
Accepted:
July 19 2004
Citation
Brad H. Lee, Kijung Yong; Diffusion barrier properties of metalorganic chemical vapor deposition compared with other barrier materials. J. Vac. Sci. Technol. B 1 September 2004; 22 (5): 2375–2379. https://doi.org/10.1116/1.1792239
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