Hexagonal GaN thin films were grown on Si(111) substrates using single molecular precursor by high vacuum metalorganic chemical vapor deposition at various temperatures from 600 to 800 °C and pressures in the range of to We first developed and synthesized the single molecular precursor of diethylazidogallium methylhydrazine adduct, with the objectives of reducing carbon content in the GaN films and lowering growth temperatures. Results of x-ray diffraction (XRD), x-ray pole figure, and x-ray photoelectron spectroscopy measurements showed that this approach yielded a single crystalline GaN thin film of [0002] orientation with relatively low carbon content. Ga-rich compositions Ga:N of 1:0.92 were obtained at a temperature of 750 °C and a pressure of However, for growth temperatures below 700 °C, we found the films to be polycrystalline. Scanning electron microscope (SEM) and atomic force microscope (AFM) images showed that the as-grown GaN films have a smooth surface morphology. Based on XRD, AFM, and SEM results, we identified effects of deposition temperature and pressure on the growth rate and crystallinity, and can suggest that our deposition process is governed by diffusion rate control. Optical properties were investigated by photoluminescence, which revealed an emission peak at 3.40 eV with a full width at half-maximum of approximately 100 meV for a GaN film grown at 750 °C and
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July 2004
This content was originally published in
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
Papers from the 31st Conference on the Physics and Chemistry of Semiconductor Interfaces
18-22 January 2004
Kailua-Kona, Hawaii (USA)
Research Article|
August 20 2004
Growth of single crystalline GaN thin films on Si(111) substrates by high vacuum metalorganic chemical vapor deposition using a single molecular precursor
Sang Hun Lee;
Sang Hun Lee
Department of Chemistry and Institute of Basic Science, Sungkyunkwan University, Suwon 440-746, Korea
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Jin-Hyo Boo;
Jin-Hyo Boo
Department of Chemistry and Institute of Basic Science, Sungkyunkwan University, Suwon 440-746, Korea
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Sung Yong Lee;
Sung Yong Lee
Thin Film Materials Laboratory, Korea Research Institute of Chemical Technology, Taejon 305-600, Korea
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Seung Ho Yoo;
Seung Ho Yoo
Thin Film Materials Laboratory, Korea Research Institute of Chemical Technology, Taejon 305-600, Korea
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Chang Gyoun Kim;
Chang Gyoun Kim
Thin Film Materials Laboratory, Korea Research Institute of Chemical Technology, Taejon 305-600, Korea
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Young Kuk Lee;
Young Kuk Lee
Thin Film Materials Laboratory, Korea Research Institute of Chemical Technology, Taejon 305-600, Korea
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Yunsoo Kim
Yunsoo Kim
Thin Film Materials Laboratory, Korea Research Institute of Chemical Technology, Taejon 305-600, Korea
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J. Vac. Sci. Technol. B 22, 2144–2148 (2004)
Article history
Received:
January 18 2004
Accepted:
May 07 2004
Citation
Sang Hun Lee, Jin-Hyo Boo, Sung Yong Lee, Seung Ho Yoo, Chang Gyoun Kim, Young Kuk Lee, Yunsoo Kim; Growth of single crystalline GaN thin films on Si(111) substrates by high vacuum metalorganic chemical vapor deposition using a single molecular precursor. J. Vac. Sci. Technol. B 1 July 2004; 22 (4): 2144–2148. https://doi.org/10.1116/1.1775193
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