ZrxSi1−xO2 films were deposited by using Zr[N(C2H5)2]4 and Si(OC4H9)4. Composition (x) of a 4 nm thick ZrxSi1−xO2 was investigated by Zr 3d,Si 2p, and O 1s x-ray photoelectron spectroscopy depth profiles. The Zr/(Zr+Si) ratio gradationally changed from ∼0.1 at the silicate film surface to ∼0.67 at the ZrxSi1−xO2-Si interface during Ar+ sputtering. An atomically flat interface with no sub-SiO2 interfacial layers was observed. The dielectric constants were approximately 9 for both Zr-silicate films as-deposited and annealed at 500 °C in oxygen ambient. When annealed in oxygen ambient, the flat band approached the ideal value in C–V curve. The leakage current density of the Zr-silicate films as-deposited and annealed at 500 °C was ∼5×10−4 and ∼3×10−8A/cm2, respectively, at a bias of 1.0 V.

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