films were deposited by using and Composition (x) of a 4 nm thick was investigated by and x-ray photoelectron spectroscopy depth profiles. The Zr/(Zr+Si) ratio gradationally changed from ∼0.1 at the silicate film surface to ∼0.67 at the interface during sputtering. An atomically flat interface with no sub- interfacial layers was observed. The dielectric constants were approximately 9 for both Zr-silicate films as-deposited and annealed at 500 °C in oxygen ambient. When annealed in oxygen ambient, the flat band approached the ideal value in curve. The leakage current density of the Zr-silicate films as-deposited and annealed at 500 °C was and respectively, at a bias of 1.0 V.
REFERENCES
1.
2.
B. H.
Lee
, L.
Kang
, R.
Neih
, W.
Qi
, and J. C.
Lee
, Appl. Phys. Lett.
76
, 1926
(2000
).3.
S.
Sayan
, E.
Garfunkel
, T.
Nishimura
, W. H.
Schulte
, T.
Gustafsson
, and G. D.
Wilk
, J. Appl. Phys.
94
, 928
(2003
).4.
G.
Wilk
, R. W.
Wallance
, and J. M.
Anthony
, J. Appl. Phys.
89
, 5243
(2001
).5.
W.
Qi
, R.
Nieh
, E.
Dharmarajan
, B. H.
Lee
, Y.
Jeon
, L.
Kang
, K.
Onishi
, and J. C.
Lee
, Appl. Phys. Lett.
77
, 1704
(2000
).6.
E.
Vainonen-Ahlgreen
, E.
Tois
, T.
Ahgren
, L.
Khriachtchev
, J.
Marles
, S.
Haukka
, and M.
Tuominen
, Comput. Mater. Sci.
27
, 65
(2003
).7.
G. D.
Wilk
, R. M.
Wallace
, and J. M.
Anthony
, J. Appl. Phys.
87
, 484
(2000
).8.
W.
Kim
, S.
Kang
, and S.
Rhee
, J. Vac. Sci. Technol. A
20
, 2096
(2002
).9.
M.
Lemberger
, A.
Paskaleva
, S.
Zürcher
, A. J.
Bauer
, L.
Frey
, and H.
Ryssel
, J. Non-Cryst. Solids
322
, 147
(2003
).10.
M.
Ritala
, K.
Kukli
, A.
Rahtu
, P. I.
Räisaänen
, M.
Leskelä
, T.
Sajavaara
, and J.
Keionen
, Science
288
, 319
(2000
).11.
12.
G. B.
Rayner
, Jr., D.
Kang
, Y.
Zhang
, and G.
Lucovsky
, J. Vac. Sci. Technol. B
20
(4
), 1748
(2002
).13.
14.
G.
Lucovsky
, G. B.
Rayner
, Jr., Y.
Zhang
, C. C.
Fulton
, R. J.
Nemanich
, G.
Appel
, H.
Ade
, and J. L.
Whitten
, Appl. Surf. Sci.
212–213
, 563
(2003
).15.
Z. W.
Zhao
, B. K.
Tay
, G. Q.
Yu
, and S. P.
Lau
, J. Phys.: Condens. Matter
15
, 7707
(2003
).16.
B. G. Streetman and S. Banerjee, Solid State Electronic Devices, 5th ed. (Prentice-Hall, Englewood Cliffs, NJ, 1995), p. 241.
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