Effects of hydrogen plasma treatment at on electrical properties and deep level spectra of the films with the Al mole fraction of are reported. It is shown that the concentration of Mg acceptors is strongly (about an order of magnitude) decreased after such a treatment, most likely due to hydrogen passivation of acceptors. It is also shown that there are in fact two closely spaced in energy shallow acceptors and that the ones dominant in the virgin and Mg-related samples are more effectively passivated than the others. Hydrogen plasma treatment also leads to suppression of deep nonradiative recombination centers as evidenced by the increase in the microcathodoluminescence intensity.
REFERENCES
1.
G. Popovici and H. Morkoc, in GaN and Related Materials II, edited by S. J. Pearton (Gordon and Breach Science, Amsterdam, 2000), pp. 93–172.
2.
S. M.
Myers
, A. F.
Wright
, G. A.
Petersen
, C. H.
Seager
, W. R.
Wampler
, M. H.
Crawford
, and J.
Han
, J. Appl. Phys.
88
, 4676
(2000
).3.
4.
5.
S. M.
Myers
, A. F.
Wright
, G. A.
Petersen
, W. R.
Wampler
, C. H.
Seager
, M. H.
Crawford
, and J.
Han
, J. Appl. Phys.
89
, 3195
(2001
).6.
S.
Limpijumong
, J. E.
Northrup
, and C. G.
Van de Walle
, Phys. Rev. Lett.
87
, 205505
-1
(2001
).7.
C. H.
Seager
, S. M.
Myers
, B.
Vaandrager
, and J. S.
Nelson
, Appl. Phys. Lett.
80
, 2693
(2002
).8.
S. M.
Myers
, C. H.
Seager
, A. F.
Wright
, B. L.
Vaandrager
, and J. S.
Nelson
, J. Appl. Phys.
92
, 6630
(2002
).9.
T. C.
Wen
, S. C.
Lee
, W. I.
Lee
, T. Y.
Chen
, S. H.
Chan
, and J. S.
Tsang
, Jpn. J. Appl. Phys., Part 2
40
, L495
(2001
).10.
N.
Takeya
and M.
Ikeda
, Jpn. J. Appl. Phys., Part 1
40
, 6260
(2001
).11.
H. Morkoc, Nitride Semiconductors and Devices (Springer, Berlin, 1999).
12.
A. Y. Polyakov, in GaN and Related Materials II, edited by S. J. Pearton (Gordon and Breach Science, Amsterdam, 2000), pp. 173–234.
13.
A. Y.
Polyakov
, A. V.
Govorkov
, N. B.
Smirnov
, A. E.
Nikolaev
, I. P.
Nikitina
, and V. A.
Dmitriev
, Solid-State Electron.
45
, 261
(2001
).14.
J.
Neugebauer
and C.
Van de Walle
, Phys. Rev. Lett.
75
, 4452
(1995
).15.
16.
B.
Theys
, Z.
Teukam
, F.
Jomard
, P.
de Mierry
, A. Y.
Polyakov
, and M.
Barbe
, Semicond. Sci. Technol.
16
, L53
(2001
).17.
18.
W.
Gotz
, N. M.
Johnson
, J.
Walker
, D. P.
Bour
, and R. A.
Street
, Appl. Phys. Lett.
68
, 667
(1996
).19.
C. H.
Seager
, S. M.
Myers
, A. F.
Wright
, D. D.
Koleske
, and A. A.
Allerman
, J. Appl. Phys.
92
, 7246
(2002
).20.
A. Y.
Polyakov
, N.
Smirnov
, A.
Govorkov
, S. J.
Pearton
, and J. M.
Zavada
, J. Appl. Phys.
94
, 3069
(2003
).21.
A. Y.
Polyakov
, N. B.
Smirnov
, A. V.
Govorkov
, D. W.
Greve
, M.
Skowronski
, M.
Shin
, and J. M.
Redwing
, Materials Research Society Internet Journal on Nitride Semiconductors Research (MIJ-NSR)
3
, 37
(1998
).22.
L. S. Berman, Purity Control of Semiconductors by the Method of Capacitance Spectroscopy (Electronic Integral Systems, St. Petersburg, 1995).
23.
L. S. Berman and A. A. Lebedev, Capacitance Spectroscopy of Deep Centers in Semiconductors (Nauka, Leningrad, 1981) (in Russian).
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