Inductive powering is promising for freeing microsystems incorporating microelectromechanical systems devices from wire tethering. Planar integrated coils used to intercept electromagnetic energy typically have large internal resistance, and hence low power transfer efficiency. We report a fabrication procedure developed to electroplate metal microstructures of large dimensions inlaid into silicon substrates. With a modified Bosch process, silicon substrates can be used to form electroplating molds of high lateral aspect ratio, so metal microstructures with thicknesses comparable to that from the LIGA process can be realized. In this work, copper coils of centimeter side length and several tens of micrometers thick are fabricated, and inlaid coils can be potentially integrated with circuits. The silicon molds can also be selectively removed to realize stand-alone metal structures. Three types of integrated coils are fabricated to compare their performance as a part of inductive link for power delivery. Power transfer efficiency is greatly improved by increased copper thickness, and is not noticeably affected by coil parasitic capacitance from silicon sidewalls. Also, higher voltage amplification at resonance was obtained with an electroplated coil.
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March 2004
This content was originally published in
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
Research Article|
March 04 2004
An inlaid electroplated copper coil for on-chip powering of microelectromechanical systems devices
Jie Wu;
Jie Wu
Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556
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Gary H. Bernstein
Gary H. Bernstein
Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556
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J. Vac. Sci. Technol. B 22, 611–618 (2004)
Article history
Received:
August 05 2003
Accepted:
January 12 2004
Citation
Jie Wu, Gary H. Bernstein; An inlaid electroplated copper coil for on-chip powering of microelectromechanical systems devices. J. Vac. Sci. Technol. B 1 March 2004; 22 (2): 611–618. https://doi.org/10.1116/1.1667505
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