The physical properties of stacked gate dielectric films deposited on compressively strained- heterolayers have been investigated using Rutherford backscattering spectrometry, high-resolution transmission electron microscopy, time-of-flight secondary ion mass spectroscopy, and Auger electron spectroscopy measurements. Polycrystalline film with physical thickness of ∼4.0 nm and an amorphous interfacial layer with a physical thickness of ∼4.5 nm has been observed. Secondary ion mass spectroscopy and Auger electron spectroscopy analyses show the formation of an amorphous Hf-silicate interfacial layer between the oxide deposited and SiGe films. The electrical properties in terms of capacitance–voltage conductance–voltage, hysteresis, current density-electric field, and shift in gate voltage under constant current stress have been studied using a metal–oxide–semiconductor structure. Dielectric constants of 26 for and 8.0 for the interfacial Hf-silicate layer have been calculated from the high frequency (100 kHz) characteristics. These dielectrics show an equivalent oxide thickness as small as 0.6 nm for and 2.2 nm for the interfacial silicate layer. The fixed oxide charge density and interface state density are found to be and respectively, for with the interfacial layer and those values are found to be and for the Hf-silicate interfacial layer, respectively. The metal–oxide–semiconductor capacitor shows low hysteresis of 0.08 V, low leakage current density of at −1.0 V, and breakdown field of 6.5 MV/cm for with interfacial layer. Significant improvement of the charge trapping properties under Fowler–Nordheim constant current stress in with the interfacial layer has been observed.
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January 2004
This content was originally published in
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
Research Article|
December 24 2003
Physical and electrical properties of ultrathin stacked gate dielectrics on compressively strained- heterolayers Available to Purchase
S. Maikap;
S. Maikap
Center for Microstructure Science of Materials, School of Materials Science and Engineering, Seoul National University, Seoul 151-742, South Korea
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Je-Hun Lee;
Je-Hun Lee
Center for Microstructure Science of Materials, School of Materials Science and Engineering, Seoul National University, Seoul 151-742, South Korea
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Doh-Y. Kim;
Doh-Y. Kim
Center for Microstructure Science of Materials, School of Materials Science and Engineering, Seoul National University, Seoul 151-742, South Korea
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R. Mahapatra;
R. Mahapatra
Department of Physics and Meteorology, IIT, Kharagpur 721 302, India
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S. K. Ray;
S. K. Ray
Department of Physics and Meteorology, IIT, Kharagpur 721 302, India
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Jae-Hoon Song;
Jae-Hoon Song
Thin Film Materials Research Center, Korea Institute of Science and Technology, Cheongryang, P.O. Box 131, Seoul 136-791, South Korea
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Y. S. No;
Y. S. No
Thin Film Materials Research Center, Korea Institute of Science and Technology, Cheongryang, P.O. Box 131, Seoul 136-791, South Korea
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Won-Kook Choi
Won-Kook Choi
Thin Film Materials Research Center, Korea Institute of Science and Technology, Cheongryang, P.O. Box 131, Seoul 136-791, South Korea
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S. Maikap
Je-Hun Lee
Doh-Y. Kim
R. Mahapatra
S. K. Ray
Jae-Hoon Song
Y. S. No
Won-Kook Choi
Center for Microstructure Science of Materials, School of Materials Science and Engineering, Seoul National University, Seoul 151-742, South Korea
J. Vac. Sci. Technol. B 22, 52–56 (2004)
Article history
Received:
May 09 2003
Accepted:
October 20 2003
Citation
S. Maikap, Je-Hun Lee, Doh-Y. Kim, R. Mahapatra, S. K. Ray, Jae-Hoon Song, Y. S. No, Won-Kook Choi; Physical and electrical properties of ultrathin stacked gate dielectrics on compressively strained- heterolayers. J. Vac. Sci. Technol. B 1 January 2004; 22 (1): 52–56. https://doi.org/10.1116/1.1633771
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