We demonstrated that formation of sub-10 nm junctions can be realized by the technique of point defect engineering (PDE). The approach was based on the fact that high-energy ion bombardment with silicon can spatially separate the distribution of interstitials and vacancies, with a vacancy-rich region formed near the surface region. Effects of PDE on the boride-enhanced diffusion (BED) were systematically investigated by using boron superlattices grown by molecular-beam epitaxy. We observed that a high-energy implant provides an effective method to suppress BED. Furthermore, PDE can also (1) increase the stability of highly doped junction, (2) retard boron diffusion to a rate much less than normal diffusion, (3) sharpen the dopant profile, and (4) enhance boron activation.
Ultrashallow junction formation by point defect engineering
Lin Shao, Phillip E. Thompson, P. A. W. van der Heide, Sanjay Patel, Quak. Y. Chen, Xuemei Wang, Hui Chen, Jiarui Liu, Wei-Kan Chu; Ultrashallow junction formation by point defect engineering. J. Vac. Sci. Technol. B 1 January 2004; 22 (1): 302–305. https://doi.org/10.1116/1.1621887
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