We demonstrate a structure for an attenuated phase-shifting mask (APSM) which is based on a three-layer Fabry–Pérot structure for ArF (193 nm) and excimer laser based lithographies. The APSM structure is composed of a metal/dielectric/metal stack. The optical characteristics of the Fabry–Pérot structure meet the following requirements: 180° phase shift, transmittance in the range of 4%–15%, reflectance of less than 10% at the exposure wavelength, and high inspection contrast at the inspection wavelength. Common dielectric and metal materials, such as chromium, tungsten, amorphous silicon, silicon dioxide, aluminum oxide, and aluminum nitride films, can be used to construct the Fabry–Pérot structure. The top metal layer can also prevent charge accumulation during electron-beam writing.
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November 2003
This content was originally published in
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
Papers from the 47th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication
27-30 May 2003
Tampa, Florida (USA)
Research Article|
December 10 2003
Fabry–Pérot structures for attenuated phase-shifting mask application in ArF and lithography
H. L. Chen;
H. L. Chen
National Nano Device Laboratories, 1001-1 Ta Hsueh Road, Hsinchu, Taiwan, Republic of China
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H. S. Wu;
H. S. Wu
Institute of Optical Science, National Central University, Chung-Li, Taiwan, Republic of China
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C. C. Lee;
C. C. Lee
Institute of Optical Science, National Central University, Chung-Li, Taiwan, Republic of China
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F. H. Ko;
F. H. Ko
National Nano Device Laboratories, 1001-1 Ta Hsueh Road, Hsinchu, Taiwan, Republic of China
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Wonder Fan;
Wonder Fan
National Nano Device Laboratories, 1001-1 Ta Hsueh Road, Hsinchu, Taiwan, Republic of China
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C. I. Hsieh
C. I. Hsieh
National Nano Device Laboratories, 1001-1 Ta Hsueh Road, Hsinchu, Taiwan, Republic of China
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J. Vac. Sci. Technol. B 21, 3057–3061 (2003)
Article history
Received:
June 26 2003
Accepted:
September 15 2003
Citation
H. L. Chen, H. S. Wu, C. C. Lee, F. H. Ko, Wonder Fan, C. I. Hsieh; Fabry–Pérot structures for attenuated phase-shifting mask application in ArF and lithography. J. Vac. Sci. Technol. B 1 November 2003; 21 (6): 3057–3061. https://doi.org/10.1116/1.1624251
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