Multiple patterning of a Si substrate is performed by nanoelectrode lithography, which transfers the nanoelectrode pattern by an electrochemical reaction. By repeating the process with a line-and-space-pattern nanoelectrode, a checked pattern is successfully fabricated. The fabricated pattern is used as an etching mask to wet etch a Si substrate. The etching process has two possible results. With one, the transferred pattern additionally acts as an etching mask. With the other, only the overlapping area of the transferred pattern can act as a mask. These results derive from the flexibility of nanoelectrode lithography.
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© 2003 American Vacuum Society.
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