Noncontact mode electrostatic force microscopy was employed to investigate cleaved sections of a GaSb-based quantum cascade laser structure. The technique enabled us to determine the surface potential distribution, at equilibrium and under applied external field, and to locate precisely the zone which is at the origin of failure in laser characteristics when a breakdown voltage is applied to the device.
REFERENCES
1.
M.
Nonnenmacher
, M.
O’Boyle
, and H. K.
Wickramasinghe
, Appl. Phys. Lett.
58
, 2921
(1991
).2.
3.
4.
5.
6.
T.
Usunami
, M.
Arakawa
, S.
Kishimoto
, T.
Mizutani
, T.
Kagawa
, and H.
Iwamura
, Jpn. J. Appl. Phys., Part 1
37
, 1522
(1998
).7.
8.
T.
Mizutani
, M.
Arakawa
, and S.
Kishimoto
, IEEE Electron Device Lett.
18
, 423
(1997
).9.
R.
Shikler
, T.
Meoded
, N.
Fried
, B.
Mishori
, and Y.
Rosenwaks
, J. Appl. Phys.
86
, 107
(1999
).10.
G. H.
Buh
, H. J.
Chung
, C. K.
Kim
, J. H.
Yi
, I. T.
Yoon
, and Y.
Kuk
, Appl. Phys. Lett.
77
, 106
(2000
).11.
G.
Leveque
, P.
Girard
, E.
Skouri
, and D.
Yarekha
, Appl. Surf. Sci.
157
, 251
(2000
).12.
A.
Ankudinov
, A.
Titkov
, E.
Kotelnikov
, and V.
Evtikhiev
, Semiconductors
35
, 840
(2001
).13.
14.
A. V.
Ankudinov
, V. P.
Evtikhiev
, E. Yu.
Kotelnikov
, A. N.
Titkov
, and R.
Laiho
, J. Appl. Phys.
93
, 432
(2003
).15.
J. F. Wager and C. W. Wilmsen, Physics and Chemistry of III-V Compounds Semiconductor Interfaces, edited by C. W. Wilmsen (Plenum, New York, 1985), Chap. 3.
16.
S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
17.
18.
P. S.
Dutta
, A. K.
Sreedhar
, H. L.
Bhat
, G. C.
Dubey
, V.
Kumar
, E.
Dieguez
, U.
Pal
, and J.
Piqueras
, J. Appl. Phys.
79
, 3246
(1996
).
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