Enhanced growth of low-resistivity NiSi on epitaxial $Si0.7Ge0.3$ on (001)Si with a sacrificial amorphous Si interlayer

Enhanced growth of low-resistivity NiSi on epitaxial $Si0.7Ge0.3$ with a sacrificial amorphous Si $(a-Si)$ interlayer has been achieved. The $a-Si$ layer with appropriate thickness was found to prevent Ge segregation, decrease the growth temperature, as well as maintain the interface flatness and morphological stability in forming low-resistivity NiSi on $Si0.7Ge0.3$ grown by molecular beam eptiaxy. The process promises to be applicable to the fabrication of high-speed Si–Ge devices.