We suggested a new design concept for the diffusion barrier in high-density memory capacitors. Both RuTiN and RuTiO were proposed as sacrificial diffusion barriers for oxygen. For newly developed RuTiN and RuTiO barriers, oxidation resistance was superior to that of polycrystalline nitride and ternary amorphous barriers reported by others. Moreover, contact resistance, the most important electrical parameter for diffusion barriers in a capacitor structure, was below 5 kΩ for the Pt/barriers/poly-Si plug/ channel layer/Si substrates even after annealing up to although the current–voltage curves showed nonlinear ohmic characteristics. Consequently, RuTiN and RuTiO films, as diffusion barriers for oxygen, were strongly recommended for achieving high-density capacitors.
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March 2003
This content was originally published in
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
Letter|
March 24 2003
Contact resistance of newly proposed RuTiN and RuTiO diffusion barriers for future high-density memory capacitors
Dong-Soo Yoon;
Dong-Soo Yoon
Advanced Process-Capacitor, Memory Research and Development Division, Hynix Semiconductor Incorporated, Kyoungki-do 467-701, Korea
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Jae Sung Roh
Jae Sung Roh
Advanced Process-Capacitor, Memory Research and Development Division, Hynix Semiconductor Incorporated, Kyoungki-do 467-701, Korea
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J. Vac. Sci. Technol. B 21, 919–922 (2003)
Article history
Received:
March 12 2002
Accepted:
December 16 2002
Citation
Dong-Soo Yoon, Jae Sung Roh; Contact resistance of newly proposed RuTiN and RuTiO diffusion barriers for future high-density memory capacitors. J. Vac. Sci. Technol. B 1 March 2003; 21 (2): 919–922. https://doi.org/10.1116/1.1545734
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