This article presents an overview of the “Nanolith” parallel electron-beam (e-beam) lithography approach. The e-beam writing head consists of an array of microguns independently driven by an active matrix complementary metal–oxide–semiconductor circuit. At the heart of each microgun is a field-emission microcathode comprised of an extraction gate and vertical carbon nanotube emitter, whose mutual alignment is critical in order to achieve highly focused electron beams. Thus, in this work, a single-mask, self-aligned technique is developed to pattern the extraction gate, insulator, and nanotubes in the microcathode. The microcathode examined here gates, 2 μm gate diameter, with multiple nanotubes per gate) exhibited a peak current of 10.5 μA at 48 V when operated with a duty cycle of 0.5%. The self-aligned process was extended to demonstrate the fabrication of single nanotube-based microcathodes with submicron gates.
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March 2003
This content was originally published in
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
Research Article|
February 12 2003
Fabrication and electrical characteristics of carbon nanotube-based microcathodes for use in a parallel electron-beam lithography system Available to Purchase
K. B. K. Teo;
K. B. K. Teo
Department of Engineering, University of Cambridge, Trunpington Street, Cambridge CB2 1PZ, United Kingdom
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M. Chhowalla;
M. Chhowalla
Department of Engineering, University of Cambridge, Trunpington Street, Cambridge CB2 1PZ, United Kingdom
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G. A. J. Amaratunga;
G. A. J. Amaratunga
Department of Engineering, University of Cambridge, Trunpington Street, Cambridge CB2 1PZ, United Kingdom
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W. I. Milne;
W. I. Milne
Department of Engineering, University of Cambridge, Trunpington Street, Cambridge CB2 1PZ, United Kingdom
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P. Legagneux;
P. Legagneux
Thales Research and Technology, Domaine de Corbeville, 91404 Orsay Cedex, France
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G. Pirio;
G. Pirio
Thales Research and Technology, Domaine de Corbeville, 91404 Orsay Cedex, France
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L. Gangloff;
L. Gangloff
Thales Research and Technology, Domaine de Corbeville, 91404 Orsay Cedex, France
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D. Pribat;
D. Pribat
Thales Research and Technology, Domaine de Corbeville, 91404 Orsay Cedex, France
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V. Semet;
V. Semet
Laboratoire d’Emission Electronique, DPM-CNRS, Université Lyon 1, Villeurbanne 69622, France
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Vu Thien Binh;
Vu Thien Binh
Laboratoire d’Emission Electronique, DPM-CNRS, Université Lyon 1, Villeurbanne 69622, France
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W. H. Bruenger;
W. H. Bruenger
Fraunhofer Institut ISiT, Germany
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J. Eichholz;
J. Eichholz
Fraunhofer Institut ISiT, Germany
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D. Friedrich;
D. Friedrich
Fraunhofer Institut ISiT, Germany
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S. B. Lee;
S. B. Lee
Microelectronics Research Centre, Cavendish Laboratory, University of Cambridge, Madingley Road, Cambridge CB3 0HE, United Kingdom
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D. G. Hasko;
D. G. Hasko
Microelectronics Research Centre, Cavendish Laboratory, University of Cambridge, Madingley Road, Cambridge CB3 0HE, United Kingdom
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H. Ahmed
H. Ahmed
Microelectronics Research Centre, Cavendish Laboratory, University of Cambridge, Madingley Road, Cambridge CB3 0HE, United Kingdom
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K. B. K. Teo
Department of Engineering, University of Cambridge, Trunpington Street, Cambridge CB2 1PZ, United Kingdom
M. Chhowalla
Department of Engineering, University of Cambridge, Trunpington Street, Cambridge CB2 1PZ, United Kingdom
G. A. J. Amaratunga
Department of Engineering, University of Cambridge, Trunpington Street, Cambridge CB2 1PZ, United Kingdom
W. I. Milne
Department of Engineering, University of Cambridge, Trunpington Street, Cambridge CB2 1PZ, United Kingdom
P. Legagneux
Thales Research and Technology, Domaine de Corbeville, 91404 Orsay Cedex, France
G. Pirio
Thales Research and Technology, Domaine de Corbeville, 91404 Orsay Cedex, France
L. Gangloff
Thales Research and Technology, Domaine de Corbeville, 91404 Orsay Cedex, France
D. Pribat
Thales Research and Technology, Domaine de Corbeville, 91404 Orsay Cedex, France
V. Semet
Laboratoire d’Emission Electronique, DPM-CNRS, Université Lyon 1, Villeurbanne 69622, France
Vu Thien Binh
Laboratoire d’Emission Electronique, DPM-CNRS, Université Lyon 1, Villeurbanne 69622, France
W. H. Bruenger
Fraunhofer Institut ISiT, Germany
J. Eichholz
Fraunhofer Institut ISiT, Germany
H. Hanssen
Fraunhofer Institut ISiT, Germany
D. Friedrich
Fraunhofer Institut ISiT, Germany
S. B. Lee
Microelectronics Research Centre, Cavendish Laboratory, University of Cambridge, Madingley Road, Cambridge CB3 0HE, United Kingdom
D. G. Hasko
Microelectronics Research Centre, Cavendish Laboratory, University of Cambridge, Madingley Road, Cambridge CB3 0HE, United Kingdom
H. Ahmed
Microelectronics Research Centre, Cavendish Laboratory, University of Cambridge, Madingley Road, Cambridge CB3 0HE, United Kingdom
J. Vac. Sci. Technol. B 21, 693–697 (2003)
Article history
Received:
May 28 2002
Accepted:
December 16 2002
Citation
K. B. K. Teo, M. Chhowalla, G. A. J. Amaratunga, W. I. Milne, P. Legagneux, G. Pirio, L. Gangloff, D. Pribat, V. Semet, Vu Thien Binh, W. H. Bruenger, J. Eichholz, H. Hanssen, D. Friedrich, S. B. Lee, D. G. Hasko, H. Ahmed; Fabrication and electrical characteristics of carbon nanotube-based microcathodes for use in a parallel electron-beam lithography system. J. Vac. Sci. Technol. B 1 March 2003; 21 (2): 693–697. https://doi.org/10.1116/1.1545755
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