We present a systematic evaluation of calixarene derivatives as high-resolution negative tone resists for electron-beam lithography with a focus on their sensitivities. We studied the effect of a modification of the calixarene molecules to trimethysilyl ethers as well as the effect of an introduction of an allyl group and showed that the introduction of double bonds into the molecules can improve the sensitivity of the resists while their position does not seem to be important. The high-resolution capability of tetraallylcalix[4]arene was confirmed by fabricating an 18 nm dot array.
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