The optimization of III-nitride submicron technology based on e-beam lithography is described. On AlGaN alloys, procedures must be completely different than on Si, due to the poor electrical conductivity and low chemical reactivity of these materials. To overcome these problems, several metal/resist multilayers have been studied, both theoretically and experimentally, the most successful being the resist/metal/semiconductor and the resist/metal/resist/semiconductor schemes. The applicability of the optimized procedure was demonstrated in the fabrication of some AlGaN-based devices: surface acoustic wave filters, metal-semiconductor-metal photodiodes, and high electron mobility transistors. All these submicron devices showed a clear improvement of their performance, as expected from size shrinkage.
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September 2002
This content was originally published in
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
Research Article|
October 04 2002
Submicron technology for III-nitride semiconductors
T. Palacios;
T. Palacios
Instituto de Sistemas Optoelectrónicos y Microtecnologı́a and Departamento de Ingenierı́a Electrónica, ETSI Telecomunicación, Universidad Politécnica de Madrid, Ciudad Universitaria, 28040–Madrid, Spain
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F. Calle;
F. Calle
Instituto de Sistemas Optoelectrónicos y Microtecnologı́a and Departamento de Ingenierı́a Electrónica, ETSI Telecomunicación, Universidad Politécnica de Madrid, Ciudad Universitaria, 28040–Madrid, Spain
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E. Monroy;
E. Monroy
Instituto de Sistemas Optoelectrónicos y Microtecnologı́a and Departamento de Ingenierı́a Electrónica, ETSI Telecomunicación, Universidad Politécnica de Madrid, Ciudad Universitaria, 28040–Madrid, Spain
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E. Muñoz
E. Muñoz
Instituto de Sistemas Optoelectrónicos y Microtecnologı́a and Departamento de Ingenierı́a Electrónica, ETSI Telecomunicación, Universidad Politécnica de Madrid, Ciudad Universitaria, 28040–Madrid, Spain
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J. Vac. Sci. Technol. B 20, 2071–2074 (2002)
Article history
Received:
January 31 2002
Accepted:
July 29 2002
Citation
T. Palacios, F. Calle, E. Monroy, E. Muñoz; Submicron technology for III-nitride semiconductors. J. Vac. Sci. Technol. B 1 September 2002; 20 (5): 2071–2074. https://doi.org/10.1116/1.1508820
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