Characteristics of $HfO2/HfSixOy$ film as an alternative gate dielectric in metal–oxide–semiconductor devices Available to Purchase

We have characterized physical and electrical properties of the $HfO2/HfSix$$Oy$ thin film for gate oxides in the metal–oxide–semiconductor device. The oxidation of Hf deposited directly on the Si substrate results in the $HfSixOy$ interfacial layer and the high-k $HfO2$ film simultaneously. Interestingly, the postoxidation $N2$ annealing of the $HfO2/HfSixOy$ thin film reduces (increases) the thickness of an amorphous $HfSixOy$ layer $(HfO2$ layer). This phenomenon causes the increase of the effective dielectric constant, while maintaining the excellent interfacial properties: The equivalent oxide thickness and the leakage current density of the Pd–$HfO2/HfSixOy$–Si capacitor were 1.4 nm and $5×10−3$ $A/cm2$ at 2 V after compensating the flatband voltage of 1 V, respectively.