In this article, we report the fabrication and analysis of 1.3 μm InAsP multiquantum well laser diodes (MQW LDs) with the n-type modulation-doped (MD) InAsP/InP/InGaP active region grown by metalorganic chemical vapor deposition. We theoretically analyze the threshold current density, differential quantum efficiency, internal quantum efficiency, and internal optical loss as a function of thickness and doping concentration of n-type Si-doped InGaP barrier and InP intermediate layer for the 1.3 μm MD-MQW LDs. The optimum thickness is 2 nm for the n-type doped barrier and 6.2 nm for the doped intermediate layer while remaining 4.4-nm-thick undoped in the InP intermediate layer to prevent from lateral diffusion of Si-doped atoms into the InAsP well. Besides, the optimum doping concentration of doped InGaP barrier and doped InP intermediate layer is With these optimum conditions, the LDs will reduce the threshold current density and threshold gain to 0.8 kA/cm2 and 43.08 cm−1 as compared to those of 1.6 kA/cm2 and 44.1 cm−1 for the undoped active region, respectively.
1.3 μm InAsP multiquantum well laser diodes with the n-type modulation-doped InAsP/InP/InGaP active region
Po-Hsun Lei, Ming-Yuan Wu, Meng-Chyi Wu, Chong-Yi Lee, Wen-Jeng Ho, Chia-Chien Lin; 1.3 μm InAsP multiquantum well laser diodes with the n-type modulation-doped InAsP/InP/InGaP active region. J. Vac. Sci. Technol. B 1 May 2002; 20 (3): 1013–1018. https://doi.org/10.1116/1.1481750
Download citation file: