Spreading resistance analysis on ultrashallow structures is complicated by the interaction of bevel rounding with geometric effects associated with lateral boundaries. When a spreading resistance probe is stepped from the original sample surface, across the rounded region at the bevel edge and onto the bevel, the resistance increases. Some of the increase is the result of approaching the lateral boundary represented by the bevel, and some is the result of increasing local sheet resistance as the probes begin to move below the original surface. We remove the geometric effect by solving the boundary value problem involving a sheet resistance which varies with distance along the direction of probe travel. Having obtained the local sheet resistance, we assign a depth for each point from profilometer data, and the usual depth-dependent analysis is used to obtain the resistivity profile.
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January 2002
This content was originally published in
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
Papers from the Sixth International Workshop on Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors
22-26 April 2001
Napa Valley, California (USA)
Research Article|
January 01 2002
Developments in ultrashallow spreading resistance analysis
David H. Dickey
David H. Dickey
Solecon Laboratories, San Jose, California 95131
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J. Vac. Sci. Technol. B 20, 467–470 (2002)
Article history
Received:
April 13 2001
Accepted:
December 06 2001
Citation
David H. Dickey; Developments in ultrashallow spreading resistance analysis. J. Vac. Sci. Technol. B 1 January 2002; 20 (1): 467–470. https://doi.org/10.1116/1.1446454
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