Boron and arsenic low-energy (200–5000 eV) implants are studied after implantation, prior to annealing. We present results of optical measurements that provide new information on the damage depth profile. In addition, a method for simultaneous determination of implant dose and energy is proposed. Thermal wave and spectroscopic methods are observed to support each other in the analysis of arsenic ultrashallow junctions. New results are reported on the boron induced implant damage and the necessity for a combined technology is addressed. A combination of optical spectroscopy and thermal wave techniques are shown to provide a highly repeatable, nondestructive metrology to assist in ultrashallow junction fabrication.
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