Semiconductor valence‐band edges are computed on absolute energy scales determined by Herman‐Skillman and Hartree–Fock neutral atom ionization energies, respectively. These calculations use Harrison’s (1977) elementary theory of heterojunctions. Differences are compared with experimental heterojunction band discontinuities. It is shown that calculations based on Herman–Skillman neutral atom energies and Harrison’s original solid‐state matrix elements agree somewhat better with experiment than later results (1981) based on Hartree–Fock neutral atom energies and modified solid‐state matrix elements. Although no simple theory for heterojunction core‐level discontinuities seems to exist, it is shown that the experimentally measured heterojunction core‐level discontinuities are roughly equal to the binding energy differences of fully relaxed neutral atom core levels such as those calculated by Huang and co‐workers.
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July 1984
This content was originally published in
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
Research Article|
July 01 1984
Heterojunction band off‐sets: Variation with ionization potential compared to experiment
Edgar A. Kraut
Edgar A. Kraut
Rockwell International, Microelectronics Research and Development Center, Thousand Oaks, California 91360
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J. Vac. Sci. Technol. B 2, 486–490 (1984)
Article history
Received:
January 31 1984
Accepted:
April 11 1984
Citation
Edgar A. Kraut; Heterojunction band off‐sets: Variation with ionization potential compared to experiment. J. Vac. Sci. Technol. B 1 July 1984; 2 (3): 486–490. https://doi.org/10.1116/1.582900
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