The potential barrier height in planar‐doped barrier structures is particularly sensitive to the concentration of background impurities present in the nominally undoped regions. MBE grown GaInAs lattice matched to InP typically has n‐type background carrier concentrations in the 1016 cm−3 range. This high level can cause lowering of the barrier to near zero. By subjecting the InP substrates to a heat treatment process before growth in order to inhibit impurity outdiffusion higher purity GaInAs can be grown and planar‐doped barrier devices with more reproducible characteristics are expected.

Topics
Electrical properties and parameters, Potential energy barrier, Semiconductors
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© 1984 American Vacuum Society.
1984
American Vacuum Society
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